All MOSFET. SSPL5505 Datasheet

 

SSPL5505 Datasheet and Replacement


   Type Designator: SSPL5505
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 230 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 160 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 88.2 nS
   Cossⓘ - Output Capacitance: 837 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
   Package: TO220
 

 SSPL5505 substitution

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SSPL5505 Datasheet (PDF)

 ..1. Size:648K  silikron
 sspl5505.pdf pdf_icon

SSPL5505

SSPL5505 Main Product Characteristics: VDSS 55V RDS(on) 4.5mohm(typ.) ID 160A Mar ki ng a nd p in Sche ma ti c di agr a m TO220 Assignment Features and Benefits: Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recove

 7.1. Size:549K  silikron
 sspl5508.pdf pdf_icon

SSPL5505

SSPL5508 Main Product Characteristics VDSS 55V RDS(on) 7.2m(typ.) ID 110A Schematic Diagram TO-220 Marking a nd P in Assignment Features and Benefits Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175

 9.1. Size:490K  silikron
 sspl50n30h.pdf pdf_icon

SSPL5505

SSPL50N30H Main Product Characteristics: VDSS 300V RDS(on) 45m(typ.) ID 50A Marking and P in TO- 247 Schematic Diagram Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recove

Datasheet: SSPL1042 , SSPL1090 , SSPL2015 , SSPL2015D , SSPL2015F , SSPL2090 , SSPL4004 , SSPL50N30H , IRF1405 , SSPL5508 , MMBT7002 , MMBT7002DW , MMBT7002E , MMBT7002K , MMBT7002KW , MMBT7002VW , MMBT7002W .

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