SSPL5505 Specs and Replacement

Type Designator: SSPL5505

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 230 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 160 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 88.2 nS

Cossⓘ - Output Capacitance: 837 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm

Package: TO220

SSPL5505 substitution

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SSPL5505 datasheet

 ..1. Size:648K  silikron
 sspl5505.pdf pdf_icon

SSPL5505

SSPL5505 Main Product Characteristics VDSS 55V RDS(on) 4.5mohm(typ.) ID 160A Mar ki ng a nd p in Sche ma ti c di agr a m TO220 Assignment Features and Benefits Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recove... See More ⇒

 7.1. Size:549K  silikron
 sspl5508.pdf pdf_icon

SSPL5505

SSPL5508 Main Product Characteristics VDSS 55V RDS(on) 7.2m (typ.) ID 110A Schematic Diagram TO-220 Marking a nd P in Assignment Features and Benefits Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175 ... See More ⇒

 9.1. Size:490K  silikron
 sspl50n30h.pdf pdf_icon

SSPL5505

SSPL50N30H Main Product Characteristics VDSS 300V RDS(on) 45m (typ.) ID 50A Marking and P in TO- 247 Schematic Diagram Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recove... See More ⇒

Detailed specifications: SSPL1042, SSPL1090, SSPL2015, SSPL2015D, SSPL2015F, SSPL2090, SSPL4004, SSPL50N30H, IRF830, SSPL5508, MMBT7002, MMBT7002DW, MMBT7002E, MMBT7002K, MMBT7002KW, MMBT7002VW, MMBT7002W

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