MMFTN2306 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MMFTN2306 Datasheet (PDF)

..1. Size:236K semtech
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MMFTN2306 N-Channel Logic Level Enhancement Mode Field Effect Transistor for high power and current handing capability 1. Gate 2. Source 3. DrainTO-236 Plastic Package DrainGate SourceAbsolute Maximum Ratings (Ta = 25 unless otherwise specified) Parameter Symbol Value UnitDrain-Source Voltage VDSS 30 VDrain-Gate Voltage VGS 12 VDrain Current - Continuous ID 5 A

6.1. Size:377K semtech
mmftn2302.pdf pdf_icon

MMFTN2302 N-Channel Logic Level Enhancement Mode Field Effect Transistor for high power and current handing capability 1. Gate 2. Source 3. DrainTO-236 Plastic Package DrainGate SourceAbsolute Maximum Ratings (Ta = 25 unless otherwise specified) Parameter Symbol Value UnitDrain-Source Voltage VDSS 20 VDrain-Gate Voltage VGS 8 VDrain Current - Continuous ID 2.4 A

8.1. Size:154K semtech
mmftn20.pdf pdf_icon

MMFTN20 N-Channel Enhancement Vertical D-MOS Transistor Features High-speed switching No secondary breakdown Applications Thin and thick film circuits 1. Gate 2. Source 3. Drain General purpose fast switching applications TO-236 Plastic Package DrainGate SourceOAbsolute Maximum Ratings (Ta = 25 C unless otherwise specified) Parameter Symbol Value Unit

8.2. Size:640K semtech
mmftn290e.pdf pdf_icon

MMFTN290E N-Channel Enhancement Mode MOSFET Features Drain Very fast switching ESD protected up to 2 KV Gate SourceAbsolute Maximum Ratings Parameter Symbol Value UnitDrain-Source Voltage VDS 20 VGate-Source Voltage VGS 8 VDrain Current VGS = 4.5 V, TA = 25 700 1) ID mA 440 1) VGS = 4.5 V, TA = 100Peak Drain Current (tp 10 s) IDM 2.8 AS

Otros transistores... MMBT7002KW , MMBT7002VW , MMBT7002W , MMFTN123 , MMFTN138 , MMFTN170 , MMFTN20 , MMFTN2302 , BS170 , MMFTN290E , MMFTN3018W , MMFTN3019E , MMFTN3406 , MMFTN501 , MMFTP84W , ST2N7000 , MMFTN138W .