MMFTN2306 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMFTN2306
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 1.38 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 12 V
Corriente continua de drenaje |Id|: 5 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 1.2 V
Tiempo de subida (tr): 20 nS
Conductancia de drenaje-sustrato (Cd): 90 pF
Resistencia entre drenaje y fuente RDS(on): 0.04 Ohm
Paquete / Cubierta: TO236
Búsqueda de reemplazo de MOSFET MMFTN2306
MMFTN2306 Datasheet (PDF)
mmftn2306.pdf
MMFTN2306 N-Channel Logic Level Enhancement Mode Field Effect Transistor for high power and current handing capability 1. Gate 2. Source 3. DrainTO-236 Plastic Package DrainGate SourceAbsolute Maximum Ratings (Ta = 25 unless otherwise specified) Parameter Symbol Value UnitDrain-Source Voltage VDSS 30 VDrain-Gate Voltage VGS 12 VDrain Current - Continuous ID 5 A
mmftn2302.pdf
MMFTN2302 N-Channel Logic Level Enhancement Mode Field Effect Transistor for high power and current handing capability 1. Gate 2. Source 3. DrainTO-236 Plastic Package DrainGate SourceAbsolute Maximum Ratings (Ta = 25 unless otherwise specified) Parameter Symbol Value UnitDrain-Source Voltage VDSS 20 VDrain-Gate Voltage VGS 8 VDrain Current - Continuous ID 2.4 A
mmftn20.pdf
MMFTN20 N-Channel Enhancement Vertical D-MOS Transistor Features High-speed switching No secondary breakdown Applications Thin and thick film circuits 1. Gate 2. Source 3. Drain General purpose fast switching applications TO-236 Plastic Package DrainGate SourceOAbsolute Maximum Ratings (Ta = 25 C unless otherwise specified) Parameter Symbol Value Unit
mmftn290e.pdf
MMFTN290E N-Channel Enhancement Mode MOSFET Features Drain Very fast switching ESD protected up to 2 KV Gate SourceAbsolute Maximum Ratings Parameter Symbol Value UnitDrain-Source Voltage VDS 20 VGate-Source Voltage VGS 8 VDrain Current VGS = 4.5 V, TA = 25 700 1) ID mA 440 1) VGS = 4.5 V, TA = 100Peak Drain Current (tp 10 s) IDM 2.8 AS
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: SPB21N50C3 | OSG80R380KF
