MMFTN2306 - описание и поиск аналогов

MMFTN2306 N-Channel Logic Level Enhancement Mode Field Effect Transistor for high power and current handing capability 1. Gate 2. Source 3. Drain TO-236 Plastic Package Drain Gate Source Absolute Maximum Ratings (Ta = 25 unless otherwise specified) Parameter Symbol Value Unit Drain-Source Voltage VDSS 30 V Drain-Gate Voltage VGS 12 V Drain Current - Continuous ID 5 A

MMFTN2302 N-Channel Logic Level Enhancement Mode Field Effect Transistor for high power and current handing capability 1. Gate 2. Source 3. Drain TO-236 Plastic Package Drain Gate Source Absolute Maximum Ratings (Ta = 25 unless otherwise specified) Parameter Symbol Value Unit Drain-Source Voltage VDSS 20 V Drain-Gate Voltage VGS 8 V Drain Current - Continuous ID 2.4 A

MMFTN20 N-Channel Enhancement Vertical D-MOS Transistor Features High-speed switching No secondary breakdown Applications Thin and thick film circuits 1. Gate 2. Source 3. Drain General purpose fast switching applications TO-236 Plastic Package Drain Gate Source O Absolute Maximum Ratings (Ta = 25 C unless otherwise specified) Parameter Symbol Value Unit

MMFTN290E N-Channel Enhancement Mode MOSFET Features Drain Very fast switching ESD protected up to 2 KV Gate Source Absolute Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS 8 V Drain Current VGS = 4.5 V, TA = 25 700 1) ID mA 440 1) VGS = 4.5 V, TA = 100 Peak Drain Current (tp 10 s) IDM 2.8 A S