ST2N7000 Todos los transistores

 

ST2N7000 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ST2N7000

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.35 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 0.2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 25 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 5 Ohm

Encapsulados: TO92

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ST2N7000 datasheet

 ..1. Size:566K  semtech
st2n7000.pdf pdf_icon

ST2N7000

ST 2N7000 Small Signal MOSFET 200 mA, 60 V N-Channel Drain Gate Source 1. Source 2.Gate 3.Drain TO-92 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Drain Source Voltage VDSS 60 V Drain-Gate Voltage (RGS = 1 M ) VDGR 60 V Gate-source Voltage Continuous VGS 20 V VGSM 40 V Non-repetitive ( tp 50 s) Drain Current Continuous

 7.1. Size:1382K  winsok
wst2n7002.pdf pdf_icon

ST2N7000

WST2N7002 N-Ch MOSFET General Description Product Summery The WST2N7002 is the highest performance trench BVDSS RDSON ID N-CH MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most 60V 2 180mA of the small power switching and load switch applications. Applications The WST2N7002 meet the RoHS and Green Product requirement with full

 7.2. Size:1407K  winsok
wst2n7002a.pdf pdf_icon

ST2N7000

WST2N7002A N-Ch MOSFET General Description Product Summery The WST2N7002A is the highest BVDSS RDSON ID performance trench N-Ch MOSFET with extreme high cell density , which provide 60V 0.14 700mA excellent RDSON and gate charge for most of the small power switching and load switch Applications applications. The WST2N7002A meet the RoHS and Green Product requirement wi

 7.3. Size:876K  winsok
wst2n7002k.pdf pdf_icon

ST2N7000

WST2N7002K N-Ch MOSFET Product Summery General Description The WST2N7002K is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 60V 1 300mA gate charge for most of the small power switching and load switch applications. Applications The WST2N7002K meet the RoHS and Green Product requirement with

Otros transistores... MMFTN2302 , MMFTN2306 , MMFTN290E , MMFTN3018W , MMFTN3019E , MMFTN3406 , MMFTN501 , MMFTP84W , IRF540 , MMFTN138W , 2SK2876-01MR , 2SK1356 , SD211DE , SD213DE , SD215DE , SST211 , SST213 .

History: S10H18RP | CS2N70A3R1-G

 

 

 

 

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