ST2N7000 Datasheet and Replacement

ST 2N7000 Small Signal MOSFET 200 mA, 60 V N-Channel DrainGateSource1. Source 2.Gate 3.DrainTO-92 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitDrain Source Voltage VDSS 60 VDrain-Gate Voltage (RGS = 1 M) VDGR 60 VGate-source Voltage Continuous VGS 20 V VGSM 40 V Non-repetitive ( tp 50 s)Drain Current Continuous

WST2N7002 N-Ch MOSFETGeneral Description Product SummeryThe WST2N7002 is the highest performance trench BVDSS RDSON ID N-CH MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most 60V 2 180mAof the small power switching and load switch applications. Applications The WST2N7002 meet the RoHS and Green Product requirement with full

WST2N7002A N-Ch MOSFETGeneral Description Product SummeryThe WST2N7002A is the highest BVDSS RDSON ID performance trench N-Ch MOSFET with extreme high cell density , which provide 60V 0.14 700mAexcellent RDSON and gate charge for most of the small power switching and load switch Applications applications. The WST2N7002A meet the RoHS and Green Product requirement wi

WST2N7002K N-Ch MOSFETProduct SummeryGeneral Description The WST2N7002K is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 60V 1 300mAgate charge for most of the small power switching and load switch applications. Applications The WST2N7002K meet the RoHS and Green Product requirement with