2SK2663 Todos los transistores

 

2SK2663 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK2663

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 10 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 900 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 1 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 23 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 14 Ohm

Encapsulados: E-PACK

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2SK2663 datasheet

 ..1. Size:336K  shindengen
 2sk2663.pdf pdf_icon

2SK2663

SHINDENGEN HVX-2 Series Power MOSFET N-Channel Enhancement type OUTLINE DIMENSIONS 2SK2663 Case E-pack ( F1E90HVX2 ) (Unit mm) 900V 1A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. Avalanche resistance guaranteed. APPLICATION Switching power supply of AC 240V input Hi

 8.1. Size:385K  toshiba
 2sk2661.pdf pdf_icon

2SK2663

2SK2661 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( MOSV) 2SK2661 Chopper Regulator, DC DC Converter and Motor Drive Applications Unit mm Low drain source ON resistance RDS = 1.35 (typ.) (ON) High forward transfer admittance Y = 4.0 S (typ.) fs Low leakage current I = 100 A (max) (V = 500 V) DSS DS Enhancement mode Vth = 2

 8.2. Size:414K  toshiba
 2sk2662.pdf pdf_icon

2SK2663

2SK2662 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2662 DC-DC Converter, Relay Drive and Motor Drive Applications Unit mm Low drain-source ON resistance RDS = 1.35 (typ.) (ON) High forward transfer admittance Y = 4.0 S (typ.) fs Low leakage current I = 100 A (max) (V = 500 V) DSS DS Enhancement-mode Vth = 2.0 4.0 V (V =

 8.3. Size:23K  panasonic
 2sk2660.pdf pdf_icon

2SK2663

Power F-MOS FETs 2SK758 2SK2660(Tentative) Silicon N-Channel Power F-MOS Unit mm Features 6.5 0.1 High-speed switching 5.3 0.1 4.35 0.1 High drain-source voltage (VDSS) 3.0 0.1 Applications High-speed switching 1.0 0.1 0.85 0.1 0.75 0.1 0.5 0.1 4.6 0.1 0.05 to 0.15 Absolute Maximum Ratings (Tc = 25 C) 1 Gate 1 2 3 2 Drain Parameter Symbol Ratin

MOSTRAR MÁS

Otros transistores... 2SK1356 , SD211DE , SD213DE , SD215DE , SST211 , SST213 , SST215 , 2SK3645-01MR , IRFB4227 , 2SK2077 , 2SK1488 , 2SK606 , 2SJ646 , 2SJ169 , 2SJ170 , FSA07N60A , FSN01N60A .

History: WMJ53N60C4

 

 

 

 

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