2SK1488 Todos los transistores

 ..1. Size:260K  toshiba
 2sk1488.pdf

( DataSheet www.DataSheet4U.com ) www.DataSheet4U.com

 ..2. Size:203K  inchange semiconductor
 2sk1488.pdf

isc N-Channel MOSFET Transistor 2SK1488 DESCRIPTION Drain Current I =10A@ T =25 D C Drain Source Voltage- V =500 (Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAX

 8.1. Size:386K  toshiba
 2sk1489.pdf

2SK1489 .5 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSII ) 2SK1489 Chopper Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.8 (typ.) High forward transfer admittance Yfs = 6.0 S (typ.) Low leakage current IDSS = 300 A (max) (VDS = 800 V) Enhancement mode Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) Absolu

 8.2. Size:61K  toshiba
 2sk1487.pdf

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 2sk1486.pdf

2SK1486 .5 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSIII ) 2SK1486 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications Low drain-source ON resistance RDS (ON) = 0.08 (typ.) High forward transfer admittance Y = 14 S (typ.) fs Low leakage current I = 300 A (max) (V = 300 V) DSS DS Enhancement-mode Vth = 2.

 8.4. Size:203K  renesas
 2sk1483c.pdf

Preliminary Data Sheet 2SK1483C R07DS1263EJ0200 Rev.2.00 N-CHANNEL MOSFET FOR SWITCHING Jun 19, 2015 Description The 2SK1483C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 2.5 V power source. Features Directly driven by a 2.5 V power source. Low on-state resistance RDS(on)1 = 63 m MAX. (VGS = 4

 8.5. Size:46K  nec
 2sk1485.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1485 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING (Unit mm) The 2SK1485, N-channel vertical type MOS FET is a switching device which can be driven directly by the output of ICs having a 5 V power source. 4.5 0.1 As the MOS FET has low on-state resistance and excellent switching 1.6 0.2 1.5 0.1 c

 8.6. Size:48K  nec
 2sk1482.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1482 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING (Unit mm) The 2SK1482 is N-channel vertical type MOS FET switching device which can be directly driven from an IC operating with a 5 V single power supply. 5.2 MAX. The device featuring low on-state resistance is of the voltage drive type and thus is ideal

 8.7. Size:266K  nec
 2sk1484.pdf

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 2sk1483.pdf

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 2sk1483.pdf

SMD Type MOSFET N-Channel MOSFET 2SK1483 1.70 0.1 Features VDS (V) = 30V ID = 2 A RDS(ON) 800m (VGS = 4V) 0.42 0.1 0.46 0.1 RDS(ON) 400m (VGS = 10V) Complments the 2SJ197 1.Gate 2.Drain 3.Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 20 Continuous

 8.10. Size:1107K  cn vbsemi
 2sk1485.pdf

 8.11. Size:203K  inchange semiconductor
 2sk1487.pdf

isc N-Channel MOSFET Transistor 2SK1487 DESCRIPTION Drain Current I = 10A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC moto