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isc N-Channel MOSFET Transistor 2SK1488DESCRIPTIONDrain Current I =10A@ T =25D CDrain Source Voltage-: V =500 (Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAX

2SK1489 .5 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSII ) 2SK1489 Chopper Regulator Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 0.8 (typ.) High forward transfer admittance : |Yfs| = 6.0 S (typ.) Low leakage current : IDSS = 300 A (max) (VDS = 800 V) Enhancement mode : Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) Absolu

2SK1486 .5 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII ) 2SK1486 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications Low drain-source ON resistance : RDS (ON) = 0.08 (typ.) High forward transfer admittance : |Y | = 14 S (typ.) fs Low leakage current : I = 300 A (max) (V = 300 V) DSS DS Enhancement-mode : Vth = 2.

Preliminary Data Sheet 2SK1483C R07DS1263EJ0200Rev.2.00N-CHANNEL MOSFET FOR SWITCHING Jun 19, 2015Description The 2SK1483C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 2.5 V power source. Features Directly driven by a 2.5 V power source. Low on-state resistance RDS(on)1 = 63 m MAX. (VGS = 4

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK1485N-CHANNEL MOS FIELD EFFECT TRANSISTORFOR SWITCHINGDESCRIPTIONPACKAGE DRAWING (Unit : mm) The 2SK1485, N-channel vertical type MOS FET is a switching devicewhich can be driven directly by the output of ICs having a 5 V power source.4.5 0.1 As the MOS FET has low on-state resistance and excellent switching 1.6 0.2 1.5 0.1c

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK1482N-CHANNEL MOS FIELD EFFECT TRANSISTORFOR SWITCHINGDESCRIPTIONPACKAGE DRAWING (Unit : mm) The 2SK1482 is N-channel vertical type MOS FET switching device whichcan be directly driven from an IC operating with a 5 V single power supply.5.2 MAX.The device featuring low on-state resistance is of the voltage drive type andthus is ideal

SMD Type MOSFETN-Channel MOSFET2SK14831.70 0.1 Features VDS (V) = 30V ID = 2 A RDS(ON) 800m (VGS = 4V)0.42 0.10.46 0.1 RDS(ON) 400m (VGS = 10V) Complments the 2SJ1971.Gate2.Drain3.Source Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30V Gate-Source Voltage VGS 20 Continuous

2SK1485www.VBsemi.comN-Channel 100 V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.) 100 % Rg and UIS Tested0.102 at VGS = 10 V 4.20.120 at VGS = 6 V 100 3.8 2.9 nC0.125 at VGS = 4.5 V 3.6APPLICATIONS DC/DC Converters / Boost Converters Load Switch LED Backlighting in LCD TVsD

isc N-Channel MOSFET Transistor 2SK1487DESCRIPTIONDrain Current I = 10A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies , UPS,AC and DCmoto