L1N60 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: L1N60
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 40 W
Voltaje máximo drenador - fuente |Vds|: 600 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 1.2 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tiempo de subida (tr): 25 nS
Conductancia de drenaje-sustrato (Cd): 20 pF
Resistencia entre drenaje y fuente RDS(on): 11.5 Ohm
Paquete / Cubierta: TO252 TO251
Búsqueda de reemplazo de MOSFET L1N60
L1N60 Datasheet (PDF)
l1n60.pdf
LESHAN RADIO COMPANY, LTD.Power MOSFETL1N601.2 Amps, 600 Volts NChannelThe LRC L1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche 1TO- 251characteristics. This power MOSFET is usually used at high speed switching applications in power suppli
l1n60a l1n60f l1n60i.pdf
LESHAN RADIO COMPANY, LTD.L1N601.0 Amps, 600 Volts N-CHANNEL MOSFET 123TO-251-3L DESCRIPTION The LRC L1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate 1charge, low on-state resistance and have a high rugged avalanche 23 TO-220F-3Lcharacteristics. This power MOSFET is usually used at high speed sw
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