SPI80N03S2-03 Todos los transistores

 

SPI80N03S2-03 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SPI80N03S2-03
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 300 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 325 nS
   Cossⓘ - Capacitancia de salida: 2420 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0034 Ohm
   Paquete / Cubierta: TO262
 

 Búsqueda de reemplazo de SPI80N03S2-03 MOSFET

   - Selección ⓘ de transistores por parámetros

 

SPI80N03S2-03 Datasheet (PDF)

 ..1. Size:456K  infineon
 spi80n03s2-03 spp80n03s2-03 spb80n03s2-03.pdf pdf_icon

SPI80N03S2-03

www.DataSheet4U.com SPI80N03S2-03SPP80N03S2-03,SPB80N03S2-03OptiMOS Power-TransistorProduct SummaryFeatureVDS30 V N-ChannelRDS(on) max. SMD version 3.1 m Enhancement modeID 80 A Excellent Gate Charge x RDS(on) product (FOM)P- TO262 -3-1 P- TO263 -3-2 P- TO220 -3-1 Superior thermal resistance 175C operating temperature Avalanche rated

 7.1. Size:208K  1
 spi80n06s-08 spp80n06s-08 spb80n06s-08.pdf pdf_icon

SPI80N03S2-03

SPB80N06S-08SPI80N06S-08, SPP80N06S-08SIPMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel - Normal Level -Enhancement modeR (SMD version) 7.7mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperature Green PackagePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Avalanche test Repetive

 7.2. Size:419K  infineon
 spp80n06s2-08 spb80n06s2-08 spi80n06s2-08.pdf pdf_icon

SPI80N03S2-03

SPI80N06S2-08SPP80N06S2-08,SPB80N06S2-08OptiMOS Power-TransistorProduct SummaryFeatureVDS55 V N-ChannelRDS(on) 8 m Enhancement modeID 80 A 175C operating temperatureP- TO262 -3-1 P- TO263 -3-2 P- TO220 -3-1 Avalanche rated dv/dt ratedType Package Ordering Code MarkingSPP80N06S2-08 P- TO220 -3-1 Q67060-S42832N0608SPB80N06S2-08 P- TO263 -

 7.3. Size:205K  infineon
 spb80n06s-08 spi80n06s-08 spp80n06s-08 spp80n06s spb80n06s spi80n06s-08green.pdf pdf_icon

SPI80N03S2-03

SPB80N06S-08SPI80N06S-08, SPP80N06S-08SIPMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel - Normal Level -Enhancement modeR (SMD version) 7.7mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperature Green PackagePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Avalanche test Repetive

MOSTRAR MÁS

Otros transistores... FTP18N06N , FTP22N06B , FTU01N60C , L1N60 , L2N600 , L4N60 , L75N75 , LIRFZ44N , IRFP250 , SPP80N03S2-03 , SPB80N03S2-03 , STP80NF70 , CL616BA , P0160AI , P0165AI , P0170AI , P0260AD .

History: IRFU3607PBF | AONS66917T | 2SJ207 | LIRFZ44N | 4N80G-TMA-T | RU30P4C | SQM200N04-1M1L

 

 
Back to Top

 


 
.