P0165AI MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

P0165AI datasheet

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P0165AI N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 650V 14 @VGS = 10V 1A TO-251 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 650 V VGS Gate-Source Voltage 30 TC = 25 C 1 ID Continuous Drain Current2 TC = 100 C 0.6 A IDM 3 Pulsed Drain Current1,

9.1. Size:204K niko-sem
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N-Channel Enhancement Mode P0165EI NIKO-SEM TO-251 Field Effect Transistor Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE 2. DRAIN G 650V 10.6 1A 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 650 V Gate-Source Voltage VGS 30 V TC = 2

9.2. Size:188K niko-sem
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N-Channel Enhancement Mode P0165ED NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE 2. DRAIN G 650V 10.6 1A 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 650 V Gate-Source Voltage VGS 30 V TC = 25 C

Otros transistores... L75N75 , LIRFZ44N , SPI80N03S2-03 , SPP80N03S2-03 , SPB80N03S2-03 , STP80NF70 , CL616BA , P0160AI , SI2302 , P0170AI , P0260AD , P0260AI , P0260AT , P0260ATF , P0260ATFS , P0260ED , P0260EI .