P0165AI Specs and Replacement
Type Designator: P0165AI
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 27.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 58 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 14 Ohm
Package: TO251
P0165AI substitution
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P0165AI datasheet
p0165ai.pdf
P0165AI N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 650V 14 @VGS = 10V 1A TO-251 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 650 V VGS Gate-Source Voltage 30 TC = 25 C 1 ID Continuous Drain Current2 TC = 100 C 0.6 A IDM 3 Pulsed Drain Current1, ... See More ⇒
p0165ei.pdf
N-Channel Enhancement Mode P0165EI NIKO-SEM TO-251 Field Effect Transistor Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE 2. DRAIN G 650V 10.6 1A 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 650 V Gate-Source Voltage VGS 30 V TC = 2... See More ⇒
p0165ed.pdf
N-Channel Enhancement Mode P0165ED NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE 2. DRAIN G 650V 10.6 1A 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 650 V Gate-Source Voltage VGS 30 V TC = 25 C ... See More ⇒
Detailed specifications: L75N75, LIRFZ44N, SPI80N03S2-03, SPP80N03S2-03, SPB80N03S2-03, STP80NF70, CL616BA, P0160AI, SI2302, P0170AI, P0260AD, P0260AI, P0260AT, P0260ATF, P0260ATFS, P0260ED, P0260EI
Keywords - P0165AI MOSFET specs
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