TD381BA Todos los transistores

 ..1. Size:412K  unikc
 td381ba.pdf

TD381BA N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 9.8m @VGS = 10V 30V 52A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC = 25 C 52 ID Continuous Drain Current2 TC = 100 C 32 A IDM 120 Pulsed Drain Current1,2 IAS Avalanch

 9.1. Size:94K  onsemi
 ntd3813n-1g.pdf

NTD3813N Power MOSFET 16 V, 51 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility V(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Devices 8.75 mW @ 10 V 16 V 51 A Applications

 9.2. Size:94K  onsemi
 ntd3817n-1g.pdf

NTD3817N Power MOSFET 16 V, 34.5 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility V(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Devices 13.9 mW @ 10 V 16 V 34.5 A Applicat