TD381BA
MOSFET. Datasheet pdf. Equivalent
Type Designator: TD381BA
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 50
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 52
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 24.1
nC
trⓘ - Rise Time: 33
nS
Cossⓘ -
Output Capacitance: 145
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0098
Ohm
Package:
TO252
TD381BA
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TD381BA
Datasheet (PDF)
..1. Size:412K unikc
td381ba.pdf 
TD381BAN-Channel Logic Level Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID9.8m @VGS = 10V30V 52ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC = 25 C52IDContinuous Drain Current2TC = 100 C32AIDM120Pulsed Drain Current1,2IASAvalanch
9.1. Size:94K onsemi
ntd3813n-1g.pdf
NTD3813NPower MOSFET16 V, 51 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design FlexibilityV(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Devices8.75 mW @ 10 V16 V51 AApplications
9.2. Size:94K onsemi
ntd3817n-1g.pdf
NTD3817NPower MOSFET16 V, 34.5 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design FlexibilityV(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Devices13.9 mW @ 10 V16 V34.5 AApplicat
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