P0460BTF Todos los transistores

 

P0460BTF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: P0460BTF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 47 nS
   Cossⓘ - Capacitancia de salida: 98 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.6 Ohm
   Paquete / Cubierta: TO220F
 

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P0460BTF Datasheet (PDF)

 0.1. Size:413K  unikc
 p0460btf-s.pdf pdf_icon

P0460BTF

P0460BTF / P046BTFSN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID600V 2.6 @VGS = 10V 4ATO-220F TO-220FS 100% UIS testedABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 600VVGSGate-Source Voltage 30TC = 25 C4IDContinuous Drain Current2TC = 100 C

 9.1. Size:809K  unikc
 p0460ed.pdf pdf_icon

P0460BTF

P0460EDN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID2.3 @VGS = 10V600V 4ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 600VVGSGate-Source Voltage 30TC = 25 C4IDContinuous Drain Current2TC = 100 C2.5AIDM20Pulsed Drain Current

 9.2. Size:403K  unikc
 p0460ctf-p.pdf pdf_icon

P0460BTF

P0460CTF-PN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID2.7 @VGS = 10V600V 4A100% UIS testedTO-220FABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 600VVGSGate-Source Voltage 30TC = 25 C4IDContinuous Drain Current2TC = 100 C2.4AIDM15

 9.3. Size:445K  unikc
 p0460eis.pdf pdf_icon

P0460BTF

P0460EISN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID2.3 @VGS = 10V600V 4A1.GATE2.DRAIN3.SOURCETO-251(IS)ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 600VVGSGate-Source Voltage 30TC = 25 C4IDContinuous Drain Current2TC = 100 C2.5

MOSTRAR MÁS

Otros transistores... P45N02LDG , P45N02LI , P45N03LTFG , P0460AD , P0460AI , P0460AS , P0460AT , P0460ATF , 10N60 , P0460BTFS , P0460CTF-P , P0460ED , P0460EI , P0460EIS , P0460ETF , P0465AD , P0465ATF .

History: BLA1011S-200R | MMIX1F360N15T2 | NCE50NF600I | BUK9Y4R4-40E | APT50M80B2VR | 2N6917 | OSG80R900FF

 

 
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