All MOSFET. P0460BTF Datasheet

 

P0460BTF MOSFET. Datasheet pdf. Equivalent


   Type Designator: P0460BTF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 47 nS
   Cossⓘ - Output Capacitance: 98 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.6 Ohm
   Package: TO220F

 P0460BTF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

P0460BTF Datasheet (PDF)

 0.1. Size:413K  unikc
 p0460btf-s.pdf

P0460BTF P0460BTF

P0460BTF / P046BTFSN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID600V 2.6 @VGS = 10V 4ATO-220F TO-220FS 100% UIS testedABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 600VVGSGate-Source Voltage 30TC = 25 C4IDContinuous Drain Current2TC = 100 C

 9.1. Size:809K  unikc
 p0460ed.pdf

P0460BTF P0460BTF

P0460EDN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID2.3 @VGS = 10V600V 4ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 600VVGSGate-Source Voltage 30TC = 25 C4IDContinuous Drain Current2TC = 100 C2.5AIDM20Pulsed Drain Current

 9.2. Size:403K  unikc
 p0460ctf-p.pdf

P0460BTF P0460BTF

P0460CTF-PN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID2.7 @VGS = 10V600V 4A100% UIS testedTO-220FABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 600VVGSGate-Source Voltage 30TC = 25 C4IDContinuous Drain Current2TC = 100 C2.4AIDM15

 9.3. Size:445K  unikc
 p0460eis.pdf

P0460BTF P0460BTF

P0460EISN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID2.3 @VGS = 10V600V 4A1.GATE2.DRAIN3.SOURCETO-251(IS)ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 600VVGSGate-Source Voltage 30TC = 25 C4IDContinuous Drain Current2TC = 100 C2.5

 9.4. Size:441K  unikc
 p0460ad.pdf

P0460BTF P0460BTF

P0460ADN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID2 @VGS = 10V600V 4ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 600 VVGSGate-Source Voltage 30 VTC = 25 C4IDContinuous Drain Current2TC = 100 C2.4AIDM20Pulsed Drain Current1

 9.5. Size:470K  unikc
 p0460etf.pdf

P0460BTF P0460BTF

P0460ETFN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID2.3 @VGS = 10V600V 4ATO-220F 100% UIS testedABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 600VVGSGate-Source Voltage 30TC = 25 C4IDContinuous Drain Current2TC = 100 C2.5AIDM20

 9.6. Size:794K  unikc
 p0460ei.pdf

P0460BTF P0460BTF

P0460EIN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID2.3 @VGS = 10V600V 4ATO-251ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 600VVGSGate-Source Voltage 30TC = 25 C4IDContinuous Drain Current2TC = 100 C2.5AIDM20Pulsed Drain Current

 9.7. Size:518K  unikc
 p0460atf-s.pdf

P0460BTF P0460BTF

P0460ATF(S)N-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID600V 2 @VGS = 10V 4ATO-220F TO-220FS 100% UIS testedABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 600VVGSGate-Source Voltage 30TC = 25 C4IDContinuous Drain Current2TC = 100 AC2.5I

 9.8. Size:437K  unikc
 p0460as-t.pdf

P0460BTF P0460BTF

P0460AS / P0460ATN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID600V 2 @VGS = 10V 4A TO-263 TO-220ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 600VVGSGate-Source Voltage 30TC = 25 C4IDContinuous Drain Current2TC = 100 C2.5AIDM20Pulse

 9.9. Size:471K  unikc
 p0460ai.pdf

P0460BTF P0460BTF

P0460AIN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID2 @VGS = 10V600V 4ATO-251ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 600 VVGSGate-Source Voltage 30 VTC = 25 C4IDContinuous Drain Current2TC = 100 C2.4AIDM20Pulsed Drain Current1

 9.10. Size:214K  niko-sem
 p0460eda.pdf

P0460BTF P0460BTF

N-Channel Enhancement Mode P0460EDA NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE 2. DRAIN G600V 2.5 4A 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS 30 V TC = 2

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: 2N7002ZDW | SSG4932N | FDD6N50 | IRFW624A | TMP630Z | STS2306

 

 
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