P0465CIS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: P0465CIS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 54 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.5 V
   Qgⓘ - Carga de la puerta: 13 nC
   trⓘ - Tiempo de subida: 59 nS
   Cossⓘ - Capacitancia de salida: 52 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.6 Ohm
   Paquete / Cubierta: TO251IS

Búsqueda de reemplazo de MOSFET P0465CIS

P0465CIS Datasheet (PDF)

..1. Size:731K unikc
p0465cis.pdf

P0465CISN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID2.6 @VGS = 10V650V 4ATO-251(IS)ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 650 VVGSGate-Source Voltage 30 VTC= 25 C4IDContinuous Drain Current2TC= 100 C2.5AIDM15Pulsed Drain Cur

7.1. Size:474K unikc
p0465ci.pdf

P0465CIN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID2.6 @VGS = 10V650V 4ATO-251ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 650 VVGSGate-Source Voltage 30 VTC= 25 C4IDContinuous Drain Current2TC= 100 C2.5AIDM15Pulsed Drain Current1

8.1. Size:422K unikc
p0465cd.pdf

P0465CDN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID2.6 @VGS = 10V650V 4ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 650 VVGSGate-Source Voltage 30 VTC= 25 C4IDContinuous Drain Current2TC= 100 C2.5AIDM15Pulsed Drain Current1

8.2. Size:428K unikc
p0465cs.pdf

P0465CSN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID2.6m @VGS = 10V650V 4ATO-263ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 650 VVGSGate-Source Voltage 30 VTC= 25 C4IDContinuous Drain CurrentTC= 100 C2.5AIDM15Pulsed Drain Current1

8.3. Size:434K unikc
p0465ct.pdf

P0465CTN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID2.6m @VGS = 10V650V 4ATO-220ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 650 VVGSGate-Source Voltage 30 VTC= 25 C4IDContinuous Drain CurrentTC= 100 C2.5AIDM15Pulsed Drain Current1

8.4. Size:789K unikc
p0465ctf-s.pdf

P0465CTF/P0465CTFSN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID2.7 @VGS = 10V650V 4A100% UIS testedTO-220FTO-220FSABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 650VVGSGate-Source Voltage 30TC = 25 C4IDContinuous Drain Current2TC = 100 C

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