P0465CIS Todos los transistores

 

P0465CIS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: P0465CIS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 54 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 59 nS
   Cossⓘ - Capacitancia de salida: 52 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.6 Ohm
   Paquete / Cubierta: TO251IS
 

 Búsqueda de reemplazo de P0465CIS MOSFET

   - Selección ⓘ de transistores por parámetros

 

P0465CIS Datasheet (PDF)

 ..1. Size:731K  unikc
 p0465cis.pdf pdf_icon

P0465CIS

P0465CISN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID2.6 @VGS = 10V650V 4ATO-251(IS)ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 650 VVGSGate-Source Voltage 30 VTC= 25 C4IDContinuous Drain Current2TC= 100 C2.5AIDM15Pulsed Drain Cur

 7.1. Size:474K  unikc
 p0465ci.pdf pdf_icon

P0465CIS

P0465CIN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID2.6 @VGS = 10V650V 4ATO-251ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 650 VVGSGate-Source Voltage 30 VTC= 25 C4IDContinuous Drain Current2TC= 100 C2.5AIDM15Pulsed Drain Current1

 8.1. Size:422K  unikc
 p0465cd.pdf pdf_icon

P0465CIS

P0465CDN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID2.6 @VGS = 10V650V 4ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 650 VVGSGate-Source Voltage 30 VTC= 25 C4IDContinuous Drain Current2TC= 100 C2.5AIDM15Pulsed Drain Current1

 8.2. Size:428K  unikc
 p0465cs.pdf pdf_icon

P0465CIS

P0465CSN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID2.6m @VGS = 10V650V 4ATO-263ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 650 VVGSGate-Source Voltage 30 VTC= 25 C4IDContinuous Drain CurrentTC= 100 C2.5AIDM15Pulsed Drain Current1

MOSTRAR MÁS

Otros transistores... P0460EI , P0460EIS , P0460ETF , P0465AD , P0465ATF , P0465ATFS , P0465CD , P0465CI , 7N65 , P0465CS , P0465CT , P0465CTF , P0465CTFS , P0470ATF , P0470ATFS , P0502CEA , P0510AT .

History: HAT2167H | FDU8870 | BSO130P03S | AOK160A60FDL | STF26NM60N | SVF4N70F | IPB031NE7N3G

 

 
Back to Top

 


 
.