P0465CS Todos los transistores

 

P0465CS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: P0465CS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 71 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 60 nS
   Cossⓘ - Capacitancia de salida: 49 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.6 Ohm
   Paquete / Cubierta: TO263
     - Selección de transistores por parámetros

 

P0465CS Datasheet (PDF)

 ..1. Size:428K  unikc
 p0465cs.pdf pdf_icon

P0465CS

P0465CSN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID2.6m @VGS = 10V650V 4ATO-263ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 650 VVGSGate-Source Voltage 30 VTC= 25 C4IDContinuous Drain CurrentTC= 100 C2.5AIDM15Pulsed Drain Current1

 8.1. Size:422K  unikc
 p0465cd.pdf pdf_icon

P0465CS

P0465CDN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID2.6 @VGS = 10V650V 4ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 650 VVGSGate-Source Voltage 30 VTC= 25 C4IDContinuous Drain Current2TC= 100 C2.5AIDM15Pulsed Drain Current1

 8.2. Size:434K  unikc
 p0465ct.pdf pdf_icon

P0465CS

P0465CTN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID2.6m @VGS = 10V650V 4ATO-220ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 650 VVGSGate-Source Voltage 30 VTC= 25 C4IDContinuous Drain CurrentTC= 100 C2.5AIDM15Pulsed Drain Current1

 8.3. Size:789K  unikc
 p0465ctf-s.pdf pdf_icon

P0465CS

P0465CTF/P0465CTFSN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID2.7 @VGS = 10V650V 4A100% UIS testedTO-220FTO-220FSABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 650VVGSGate-Source Voltage 30TC = 25 C4IDContinuous Drain Current2TC = 100 C

MOSTRAR MÁS

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: BS170RLRPG | IXFT14N80P | BL4N150-B | SMP40N10 | SWD086R68E7T | IRF624A | DMC2041UFDB

 

 
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