P0465CS - аналоги, параметры транзистора - Справочник транзисторов

P0465CS даташит

..1. Size:428K unikc
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P0465CS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 2.6m @VGS = 10V 650V 4A TO-263 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 650 V VGS Gate-Source Voltage 30 V TC= 25 C 4 ID Continuous Drain Current TC= 100 C 2.5 A IDM 15 Pulsed Drain Current1

8.1. Size:422K unikc
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P0465CD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 2.6 @VGS = 10V 650V 4A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 650 V VGS Gate-Source Voltage 30 V TC= 25 C 4 ID Continuous Drain Current2 TC= 100 C 2.5 A IDM 15 Pulsed Drain Current1

8.2. Size:434K unikc
p0465ct.pdf pdf_icon

P0465CT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 2.6m @VGS = 10V 650V 4A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 650 V VGS Gate-Source Voltage 30 V TC= 25 C 4 ID Continuous Drain Current TC= 100 C 2.5 A IDM 15 Pulsed Drain Current1

8.3. Size:789K unikc
p0465ctf-s.pdf pdf_icon

P0465CTF/P0465CTFS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 2.7 @VGS = 10V 650V 4A 100% UIS tested TO-220F TO-220FS ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 650 V VGS Gate-Source Voltage 30 TC = 25 C 4 ID Continuous Drain Current2 TC = 100 C