P0465CT Todos los transistores

 

P0465CT MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: P0465CT

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 71 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 60 nS

Cossⓘ - Capacitancia de salida: 49 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.6 Ohm

Encapsulados: TO220

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P0465CT datasheet

 ..1. Size:434K  unikc
 p0465ct.pdf pdf_icon

P0465CT

P0465CT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 2.6m @VGS = 10V 650V 4A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 650 V VGS Gate-Source Voltage 30 V TC= 25 C 4 ID Continuous Drain Current TC= 100 C 2.5 A IDM 15 Pulsed Drain Current1

 0.1. Size:789K  unikc
 p0465ctf-s.pdf pdf_icon

P0465CT

P0465CTF/P0465CTFS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 2.7 @VGS = 10V 650V 4A 100% UIS tested TO-220F TO-220FS ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 650 V VGS Gate-Source Voltage 30 TC = 25 C 4 ID Continuous Drain Current2 TC = 100 C

 8.1. Size:422K  unikc
 p0465cd.pdf pdf_icon

P0465CT

P0465CD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 2.6 @VGS = 10V 650V 4A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 650 V VGS Gate-Source Voltage 30 V TC= 25 C 4 ID Continuous Drain Current2 TC= 100 C 2.5 A IDM 15 Pulsed Drain Current1

 8.2. Size:428K  unikc
 p0465cs.pdf pdf_icon

P0465CT

P0465CS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 2.6m @VGS = 10V 650V 4A TO-263 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 650 V VGS Gate-Source Voltage 30 V TC= 25 C 4 ID Continuous Drain Current TC= 100 C 2.5 A IDM 15 Pulsed Drain Current1

MOSTRAR MÁS

Otros transistores... P0460ETF , P0465AD , P0465ATF , P0465ATFS , P0465CD , P0465CI , P0465CIS , P0465CS , AON7408 , P0465CTF , P0465CTFS , P0470ATF , P0470ATFS , P0502CEA , P0510AT , P0550AD , P0550AT .

 

 

 

 

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