All MOSFET. P0465CT Datasheet

 

P0465CT MOSFET. Datasheet pdf. Equivalent

Type Designator: P0465CT

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 71 W

Maximum Drain-Source Voltage |Vds|: 650 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 4 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 60 nS

Drain-Source Capacitance (Cd): 49 pF

Maximum Drain-Source On-State Resistance (Rds): 2.6 Ohm

Package: TO220

P0465CT Transistor Equivalent Substitute - MOSFET Cross-Reference Search

P0465CT Datasheet (PDF)

1.1. p0465ctf-s.pdf Size:789K _unikc

P0465CT
P0465CT

P0465CTF/P0465CTFS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 2.7Ω @VGS = 10V 650V 4A 100% UIS tested TO-220F TO-220FS ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±30 TC = 25 ° C 4 ID Continuous Drain Current2 TC = 100 ° C

1.2. p0465ct.pdf Size:434K _unikc

P0465CT
P0465CT

P0465CT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 2.6mΩ @VGS = 10V 650V 4A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±30 V TC= 25 ° C 4 ID Continuous Drain Current TC= 100 ° C 2.5 A IDM 15 Pulsed Drain Current1

4.1. p0465cs.pdf Size:428K _unikc

P0465CT
P0465CT

P0465CS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 2.6mΩ @VGS = 10V 650V 4A TO-263 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±30 V TC= 25 ° C 4 ID Continuous Drain Current TC= 100 ° C 2.5 A IDM 15 Pulsed Drain Current1

4.2. p0465ci.pdf Size:474K _unikc

P0465CT
P0465CT

P0465CI N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 2.6Ω @VGS = 10V 650V 4A TO-251 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±30 V TC= 25 ° C 4 ID Continuous Drain Current2 TC= 100 ° C 2.5 A IDM 15 Pulsed Drain Current1

4.3. p0465cis.pdf Size:731K _unikc

P0465CT
P0465CT

P0465CIS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 2.6Ω @VGS = 10V 650V 4A TO-251(IS) ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±30 V TC= 25 ° C 4 ID Continuous Drain Current2 TC= 100 ° C 2.5 A IDM 15 Pulsed Drain Cur

4.4. p0465cd.pdf Size:422K _unikc

P0465CT
P0465CT

P0465CD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 2.6Ω @VGS = 10V 650V 4A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±30 V TC= 25 ° C 4 ID Continuous Drain Current2 TC= 100 ° C 2.5 A IDM 15 Pulsed Drain Current1

Datasheet: P0460ETF , P0465AD , P0465ATF , P0465ATFS , P0465CD , P0465CI , P0465CIS , P0465CS , IRF2807 , P0465CTF , P0465CTFS , P0470ATF , P0470ATFS , P0502CEA , P0510AT , P0550AD , P0550AT .

 


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