P0550BT Todos los transistores

 

P0550BT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: P0550BT
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 89 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.5 V
   Qgⓘ - Carga de la puerta: 12.1 nC
   trⓘ - Tiempo de subida: 22 nS
   Cossⓘ - Capacitancia de salida: 93 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.75 Ohm
   Paquete / Cubierta: TO220

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P0550BT Datasheet (PDF)

 ..1. Size:355K  unikc
p0550bt.pdf

P0550BT
P0550BT

P0550BTN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID500V 1.75 @VGS = 10V 4.5ATO-220100% UIS testedABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 500VVGSGate-Source Voltage 30TC = 25 C4.5IDContinuous Drain Current2TC = 100 C3AIDM15P

 8.1. Size:430K  unikc
p0550bd.pdf

P0550BT
P0550BT

P0550BDN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID500V 1.75 @VGS = 10V 4.5ATO-252100% UIS testedABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 500VVGSGate-Source Voltage 30TC = 25 C4.5IDContinuous Drain Current2TC = 100 AC3IDM15Pu

 9.1. Size:607K  supertex
vp0550.pdf

P0550BT
P0550BT

Supertex inc. VP0550P-Channel Enhancement-ModeVertical DMOS FETsFeaturesGeneral Description Free from secondary breakdownThe Supertex VP0550 is an enhancement-mode (normally- Low power drive requirement off) transistor that utilizes a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. Ease of parallelingThis combination produ

 9.2. Size:538K  unikc
p0550ad.pdf

P0550BT
P0550BT

P0550ADN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID500V 1.5 @VGS = 10V 5ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSDrain-Source Voltage VDS500VGate-Source Voltage VGS30TC = 25 C5IDContinuous Drain Current2TC = 100 C3AIDM15Pulsed Drain Current1 ,

 9.3. Size:499K  unikc
p0550ed.pdf

P0550BT
P0550BT

P0550EDN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID1.55 @VGS = 10V500V 5ATO-252100% UIS testedABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 500VVGSGate-Source Voltage 30TC = 25 C5IDContinuous Drain Current2TC = 100 C3.2AIDM20Pu

 9.4. Size:825K  unikc
p0550ei.pdf

P0550BT
P0550BT

P0550EIN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID1.55 @VGS = 10V500V 5ATO-251100% UIS testedABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 500VVGSGate-Source Voltage 30TC = 25 C5IDContinuous Drain Current2TC = 100 C3.2AIDM20Pu

 9.5. Size:356K  unikc
p0550at.pdf

P0550BT
P0550BT

P0550ATN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID500V 1.5 @VGS = 10V 5ATO-220ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 500VVGSGate-Source Voltage 30TC = 25 C5IDContinuous Drain Current2TC = 100 C3AIDM15Pulsed Drain Current1 ,

 9.6. Size:533K  unikc
p0550etf-s.pdf

P0550BT
P0550BT

P0550ETF / P0550ETFSN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID1.55 @VGS = 10V500V 5ATO-220F TO-220FSABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 500VVGSGate-Source Voltage 30TC = 25 C5IDContinuous Drain Current2TC = 100 C3.2AIDM

 9.7. Size:571K  unikc
p0550atf.pdf

P0550BT
P0550BT

P0550ATFN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID1.5 @VGS = 10V500V 5ATO-220F 100% UIS testedABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 500VVGSGate-Source Voltage 30TC = 25 C5IDContinuous Drain Current2TC = 100 AC3IDM15Pul

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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