PD570BA Todos los transistores

 ..1. Size:416K  unikc
 pd570ba.pdf

PD570BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 10m @VGS = 10V 40V 49A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage 20 TC = 25 C 49 ID Continuous Drain Current TC = 100 C 31 A IDM 100 Pulsed Drain Current1

 9.1. Size:131K  st
 pd57002.pdf

PD57002 PD57002S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 2 W with 15 dB gain @ 960 MHz / 28 V NEW RF PLASTIC PACKAGE PowerSO-10RF (formed lead) ORDER CODE BRANDING DESCRIPTION PD57002 PD57002 The PD57002 is a common source N-Channel, en- hancement-mo

 9.2. Size:305K  st
 pd57060.pdf

PD57060 PD57060S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 60 W with 14.3 dB gain @ 945 MHz / 28V PowerSO-10RF (formed lead) NEW RF PLASTIC PACKAGE ORDER CODE BRANDING DESCRIPTION PD57060 PD57060 The PD57060S is a common source N-Channel, enhancement-

 9.3. Size:500K  st
 pd57030-e pd57030s-e.pdf

PD57030-E PD57030S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features Excellent thermal stability Common source configuration POUT = 30 W with 14dB gain @ 945 MHz / 28 V New RF plastic package Description PowerSO-10RF (formed lead) The device is a common source N-channel, enhancement-mode lateral field-effect RF power

 9.4. Size:514K  st
 pd57060s-e.pdf

PD57060S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features Excellent thermal stability Common source configuration POUT = 60 W with 14.3dB gain@ 945 MHz/28 V New RF plastic package Description PowerSO-10RF (formed lead) The device is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It

 9.5. Size:296K  st
 pd57070.pdf

PD57070 PD57070S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 70 W with 14.7 dB gain @ 945 MHz / 28V NEW RF PLASTIC PACKAGE PowerSO-10RF (formed lead) ORDER CODE BRANDING DESCRIPTION PD57070 PD57070 The PD57070 is a common source N-Channel, enhancement-mod

 9.6. Size:487K  st
 pd57045-e pd57045s-e.pdf

PD57045-E PD57045S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features Excellent thermal stability Common source configuration POUT = 45 W with 13dB gain @ 945 MHz / 28 V New RF plastic package Description PowerSO-10RF (formed lead) The device is a common source N-channel, enhancement-mode lateral field-effect RF power

 9.7. Size:39K  st
 pd57006-01.pdf

PD57006-01 RF POWER TRANSISTORS The LdmoST Plastic FAMILY TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 6 W with 15 dB gain @ 945 MHz / 28V NEW LEADLESS PLASTIC PACKAGE PowerFLAT (5x5) DESCRIPTION ORDER CODE BRANDING The PD57006-01 is a common source N-Channel, PD57006-01 PD57006-01 enhance

 9.8. Size:368K  st
 pd57002-e pd57002s-e.pdf

PD57002-E PD57002S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features Excellent thermal stability Common source configuration POUT = 2 W with 15dB gain @ 960 MHz / 28 V New RF plastic package Description PowerSO-10RF (formed lead) The device is a common source N-channel, enhancement-mode lateral field-effect RF power

 9.9. Size:39K  st
 pd57002-01.pdf

PD57002-01 RF POWER TRANSISTORS The LdmoST Plastic FAMILY TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 2 W with 15 dB gain @ 960 MHz / 28 V NEW LEADLESS PLASTIC PACKAGE PowerFLAT (5x5) DESCRIPTION ORDER CODE BRANDING The PD57002-01 is a common source N-Channel, PD57002-01 PD57002-01 enhan

 9.10. Size:506K  st
 pd57006-e pd57006s-e.pdf

PD57006-E PD57006S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features Excellent thermal stability Common source configuration POUT = 6 W with 15dB gain @ 945 MHz / 28 V New RF plastic package PowerSO-10RF (formed lead) Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power

 9.11. Size:517K  st
 pd57070-e pd57070s-e.pdf

PD57070-E PD57070S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features Excellent thermal stability Common source configuration POUT = 70 W with 14.7dB gain @945 MHz/28 V New RF plastic package Description PowerSO-10RF (formed lead) The device is a common source N-channel, enhancement-mode lateral field-effect RF power

 9.12. Size:938K  st
 pd57018-e.pdf

PD57018-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features Excellent thermal stability Common source configuration POUT = 18 W with 16.5dB gain@945 MHz/28 V New RF plastic package PowerSO-10RF Description (formed lead) The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor.

 9.13. Size:277K  st
 pd57006.pdf

PD57006 PD57006S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 6 W with 15 dB gain @ 945 MHz / 28V NEW RF PLASTIC PACKAGE PowerSO-10RF (formed lead) DESCRIPTION The PD57006 is a common source N-Channel, en- ORDER CODE BRANDING hancement-mode lateral Field-Ef

 9.14. Size:938K  st
 pd57018-e pd57018s-e.pdf

PD57018-E PD57018S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features Excellent thermal stability Common source configuration POUT = 18 W with 16.5dB gain@945 MHz/28 V New RF plastic package PowerSO-10RF Description (formed lead) The device is a common source N-channel, enhancement-mode lateral field-effect RF power