PD570BA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: PD570BA
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 40 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 49 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 37.1 nC
   trⓘ - Tiempo de subida: 36 nS
   Cossⓘ - Capacitancia de salida: 149 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm
   Paquete / Cubierta: TO252

Búsqueda de reemplazo de MOSFET PD570BA

PD570BA Datasheet (PDF)

..1. Size:416K unikc
pd570ba.pdf

PD570BAN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID10m @VGS = 10V40V 49ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 40VVGSGate-Source Voltage 20TC = 25 C49IDContinuous Drain CurrentTC = 100 C31AIDM100Pulsed Drain Current1

9.1. Size:131K st
pd57002.pdf

PD57002 PD57002SRF POWER TRANSISTORSThe LdmoST Plastic FAMILYN-CHANNEL ENHANCEMENT-MODE LATERALMOSFETs EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 2 W with 15 dB gain @ 960 MHz / 28 V NEW RF PLASTIC PACKAGEPowerSO-10RF(formed lead)ORDER CODE BRANDINGDESCRIPTIONPD57002 PD57002The PD57002 is a common source N-Channel, en-hancement-mo

9.2. Size:305K st
pd57060.pdf

PD57060PD57060SRF POWER TRANSISTORSThe LdmoST Plastic FAMILYN-CHANNEL ENHANCEMENT-MODE LATERALMOSFETs EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 60 W with 14.3 dB gain @ 945 MHz / 28VPowerSO-10RF(formed lead) NEW RF PLASTIC PACKAGEORDER CODE BRANDINGDESCRIPTIONPD57060 PD57060The PD57060S is a common source N-Channel,enhancement-

9.3. Size:500K st
pd57030-e pd57030s-e.pdf

PD57030-EPD57030S-ERF POWER transistor, LdmoST plastic familyN-channel enhancement-mode, lateral MOSFETsFeatures Excellent thermal stability Common source configuration POUT = 30 W with 14dB gain @ 945 MHz / 28 V New RF plastic packageDescription PowerSO-10RF(formed lead)The device is a common source N-channel, enhancement-mode lateral field-effect RF power

9.4. Size:514K st
pd57060s-e.pdf

PD57060S-ERF POWER transistor, LdmoST plastic familyN-channel enhancement-mode, lateral MOSFETsFeatures Excellent thermal stability Common source configuration POUT = 60 W with 14.3dB gain@ 945 MHz/28 V New RF plastic packageDescription PowerSO-10RF(formed lead)The device is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It

9.5. Size:296K st
pd57070.pdf

PD57070PD57070SRF POWER TRANSISTORSThe LdmoST Plastic FAMILYN-CHANNEL ENHANCEMENT-MODE LATERALMOSFETs EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 70 W with 14.7 dB gain @ 945 MHz / 28V NEW RF PLASTIC PACKAGEPowerSO-10RF(formed lead)ORDER CODE BRANDINGDESCRIPTIONPD57070 PD57070The PD57070 is a common source N-Channel,enhancement-mod

9.6. Size:487K st
pd57045-e pd57045s-e.pdf

PD57045-EPD57045S-ERF POWER transistor, LdmoST plastic familyN-channel enhancement-mode, lateral MOSFETsFeatures Excellent thermal stability Common source configuration POUT = 45 W with 13dB gain @ 945 MHz / 28 V New RF plastic packageDescription PowerSO-10RF(formed lead)The device is a common source N-channel, enhancement-mode lateral field-effect RF power

9.7. Size:39K st
pd57006-01.pdf

PD57006-01RF POWER TRANSISTORSThe LdmoST Plastic FAMILYTARGET DATAN-CHANNEL ENHANCEMENT-MODE LATERALMOSFETs EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 6 W with 15 dB gain @ 945 MHz / 28V NEW LEADLESS PLASTIC PACKAGEPowerFLAT(5x5)DESCRIPTIONORDER CODE BRANDINGThe PD57006-01 is a common source N-Channel,PD57006-01 PD57006-01enhance

9.8. Size:368K st
pd57002-e pd57002s-e.pdf

PD57002-EPD57002S-ERF POWER transistor, LdmoST plastic familyN-channel enhancement-mode, lateral MOSFETsFeatures Excellent thermal stability Common source configuration POUT = 2 W with 15dB gain @ 960 MHz / 28 V New RF plastic packageDescription PowerSO-10RF(formed lead)The device is a common source N-channel, enhancement-mode lateral field-effect RF power

9.9. Size:39K st
pd57002-01.pdf

PD57002-01RF POWER TRANSISTORSThe LdmoST Plastic FAMILYTARGET DATAN-CHANNEL ENHANCEMENT-MODE LATERALMOSFETs EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 2 W with 15 dB gain @ 960 MHz / 28 V NEW LEADLESS PLASTIC PACKAGEPowerFLAT(5x5)DESCRIPTIONORDER CODE BRANDINGThe PD57002-01 is a common source N-Channel,PD57002-01 PD57002-01enhan

9.10. Size:506K st
pd57006-e pd57006s-e.pdf

PD57006-EPD57006S-ERF POWER transistor, LdmoST plastic familyN-channel enhancement-mode, lateral MOSFETsFeatures Excellent thermal stability Common source configuration POUT = 6 W with 15dB gain @ 945 MHz / 28 V New RF plastic packagePowerSO-10RF(formed lead)DescriptionThe device is a common source N-channel, enhancement-mode lateral field-effect RF power

9.11. Size:517K st
pd57070-e pd57070s-e.pdf

PD57070-EPD57070S-ERF POWER transistor, LdmoST plastic familyN-channel enhancement-mode, lateral MOSFETsFeatures Excellent thermal stability Common source configuration POUT = 70 W with 14.7dB gain @945 MHz/28 V New RF plastic packageDescription PowerSO-10RF(formed lead)The device is a common source N-channel, enhancement-mode lateral field-effect RF power

9.12. Size:938K st
pd57018-e.pdf

PD57018-ERF POWER transistor, LdmoST plastic familyN-channel enhancement-mode, lateral MOSFETsFeatures Excellent thermal stability Common source configuration POUT = 18 W with 16.5dB gain@945 MHz/28 V New RF plastic packagePowerSO-10RFDescription(formed lead)The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor.

9.13. Size:277K st
pd57006.pdf

PD57006PD57006SRF POWER TRANSISTORSThe LdmoST Plastic FAMILYN-CHANNEL ENHANCEMENT-MODE LATERALMOSFETs EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 6 W with 15 dB gain @ 945 MHz / 28V NEW RF PLASTIC PACKAGEPowerSO-10RF(formed lead)DESCRIPTIONThe PD57006 is a common source N-Channel, en-ORDER CODE BRANDINGhancement-mode lateral Field-Ef

9.14. Size:938K st
pd57018-e pd57018s-e.pdf

PD57018-EPD57018S-ERF POWER transistor, LdmoST plastic familyN-channel enhancement-mode, lateral MOSFETsFeatures Excellent thermal stability Common source configuration POUT = 18 W with 16.5dB gain@945 MHz/28 V New RF plastic packagePowerSO-10RFDescription(formed lead)The device is a common source N-channel, enhancement-mode lateral field-effect RF power

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