PD570BA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PD570BAN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID10m @VGS = 10V40V 49ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 40VVGSGate-Source Voltage 20TC = 25 C49IDContinuous Drain CurrentTC = 100 C31AIDM100Pulsed Drain Current1

PD57002 PD57002SRF POWER TRANSISTORSThe LdmoST Plastic FAMILYN-CHANNEL ENHANCEMENT-MODE LATERALMOSFETs EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 2 W with 15 dB gain @ 960 MHz / 28 V NEW RF PLASTIC PACKAGEPowerSO-10RF(formed lead)ORDER CODE BRANDINGDESCRIPTIONPD57002 PD57002The PD57002 is a common source N-Channel, en-hancement-mo

PD57060PD57060SRF POWER TRANSISTORSThe LdmoST Plastic FAMILYN-CHANNEL ENHANCEMENT-MODE LATERALMOSFETs EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 60 W with 14.3 dB gain @ 945 MHz / 28VPowerSO-10RF(formed lead) NEW RF PLASTIC PACKAGEORDER CODE BRANDINGDESCRIPTIONPD57060 PD57060The PD57060S is a common source N-Channel,enhancement-

PD57030-EPD57030S-ERF POWER transistor, LdmoST plastic familyN-channel enhancement-mode, lateral MOSFETsFeatures Excellent thermal stability Common source configuration POUT = 30 W with 14dB gain @ 945 MHz / 28 V New RF plastic packageDescription PowerSO-10RF(formed lead)The device is a common source N-channel, enhancement-mode lateral field-effect RF power

PD57060S-ERF POWER transistor, LdmoST plastic familyN-channel enhancement-mode, lateral MOSFETsFeatures Excellent thermal stability Common source configuration POUT = 60 W with 14.3dB gain@ 945 MHz/28 V New RF plastic packageDescription PowerSO-10RF(formed lead)The device is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It

PD57070PD57070SRF POWER TRANSISTORSThe LdmoST Plastic FAMILYN-CHANNEL ENHANCEMENT-MODE LATERALMOSFETs EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 70 W with 14.7 dB gain @ 945 MHz / 28V NEW RF PLASTIC PACKAGEPowerSO-10RF(formed lead)ORDER CODE BRANDINGDESCRIPTIONPD57070 PD57070The PD57070 is a common source N-Channel,enhancement-mod

PD57045-EPD57045S-ERF POWER transistor, LdmoST plastic familyN-channel enhancement-mode, lateral MOSFETsFeatures Excellent thermal stability Common source configuration POUT = 45 W with 13dB gain @ 945 MHz / 28 V New RF plastic packageDescription PowerSO-10RF(formed lead)The device is a common source N-channel, enhancement-mode lateral field-effect RF power

PD57006-01RF POWER TRANSISTORSThe LdmoST Plastic FAMILYTARGET DATAN-CHANNEL ENHANCEMENT-MODE LATERALMOSFETs EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 6 W with 15 dB gain @ 945 MHz / 28V NEW LEADLESS PLASTIC PACKAGEPowerFLAT(5x5)DESCRIPTIONORDER CODE BRANDINGThe PD57006-01 is a common source N-Channel,PD57006-01 PD57006-01enhance

PD57002-EPD57002S-ERF POWER transistor, LdmoST plastic familyN-channel enhancement-mode, lateral MOSFETsFeatures Excellent thermal stability Common source configuration POUT = 2 W with 15dB gain @ 960 MHz / 28 V New RF plastic packageDescription PowerSO-10RF(formed lead)The device is a common source N-channel, enhancement-mode lateral field-effect RF power

PD57002-01RF POWER TRANSISTORSThe LdmoST Plastic FAMILYTARGET DATAN-CHANNEL ENHANCEMENT-MODE LATERALMOSFETs EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 2 W with 15 dB gain @ 960 MHz / 28 V NEW LEADLESS PLASTIC PACKAGEPowerFLAT(5x5)DESCRIPTIONORDER CODE BRANDINGThe PD57002-01 is a common source N-Channel,PD57002-01 PD57002-01enhan

PD57006-EPD57006S-ERF POWER transistor, LdmoST plastic familyN-channel enhancement-mode, lateral MOSFETsFeatures Excellent thermal stability Common source configuration POUT = 6 W with 15dB gain @ 945 MHz / 28 V New RF plastic packagePowerSO-10RF(formed lead)DescriptionThe device is a common source N-channel, enhancement-mode lateral field-effect RF power

PD57070-EPD57070S-ERF POWER transistor, LdmoST plastic familyN-channel enhancement-mode, lateral MOSFETsFeatures Excellent thermal stability Common source configuration POUT = 70 W with 14.7dB gain @945 MHz/28 V New RF plastic packageDescription PowerSO-10RF(formed lead)The device is a common source N-channel, enhancement-mode lateral field-effect RF power

PD57018-ERF POWER transistor, LdmoST plastic familyN-channel enhancement-mode, lateral MOSFETsFeatures Excellent thermal stability Common source configuration POUT = 18 W with 16.5dB gain@945 MHz/28 V New RF plastic packagePowerSO-10RFDescription(formed lead)The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor.

PD57006PD57006SRF POWER TRANSISTORSThe LdmoST Plastic FAMILYN-CHANNEL ENHANCEMENT-MODE LATERALMOSFETs EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 6 W with 15 dB gain @ 945 MHz / 28V NEW RF PLASTIC PACKAGEPowerSO-10RF(formed lead)DESCRIPTIONThe PD57006 is a common source N-Channel, en-ORDER CODE BRANDINGhancement-mode lateral Field-Ef

PD57018-EPD57018S-ERF POWER transistor, LdmoST plastic familyN-channel enhancement-mode, lateral MOSFETsFeatures Excellent thermal stability Common source configuration POUT = 18 W with 16.5dB gain@945 MHz/28 V New RF plastic packagePowerSO-10RFDescription(formed lead)The device is a common source N-channel, enhancement-mode lateral field-effect RF power