PD570BA MOSFET. Datasheet pdf. Equivalent
Type Designator: PD570BA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 49 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 37.1 nC
trⓘ - Rise Time: 36 nS
Cossⓘ - Output Capacitance: 149 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: TO252
PD570BA Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PD570BA Datasheet (PDF)
pd570ba.pdf
PD570BAN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID10m @VGS = 10V40V 49ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 40VVGSGate-Source Voltage 20TC = 25 C49IDContinuous Drain CurrentTC = 100 C31AIDM100Pulsed Drain Current1
pd57002.pdf
PD57002 PD57002SRF POWER TRANSISTORSThe LdmoST Plastic FAMILYN-CHANNEL ENHANCEMENT-MODE LATERALMOSFETs EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 2 W with 15 dB gain @ 960 MHz / 28 V NEW RF PLASTIC PACKAGEPowerSO-10RF(formed lead)ORDER CODE BRANDINGDESCRIPTIONPD57002 PD57002The PD57002 is a common source N-Channel, en-hancement-mo
pd57060.pdf
PD57060PD57060SRF POWER TRANSISTORSThe LdmoST Plastic FAMILYN-CHANNEL ENHANCEMENT-MODE LATERALMOSFETs EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 60 W with 14.3 dB gain @ 945 MHz / 28VPowerSO-10RF(formed lead) NEW RF PLASTIC PACKAGEORDER CODE BRANDINGDESCRIPTIONPD57060 PD57060The PD57060S is a common source N-Channel,enhancement-
pd57030-e pd57030s-e.pdf
PD57030-EPD57030S-ERF POWER transistor, LdmoST plastic familyN-channel enhancement-mode, lateral MOSFETsFeatures Excellent thermal stability Common source configuration POUT = 30 W with 14dB gain @ 945 MHz / 28 V New RF plastic packageDescription PowerSO-10RF(formed lead)The device is a common source N-channel, enhancement-mode lateral field-effect RF power
pd57060s-e.pdf
PD57060S-ERF POWER transistor, LdmoST plastic familyN-channel enhancement-mode, lateral MOSFETsFeatures Excellent thermal stability Common source configuration POUT = 60 W with 14.3dB gain@ 945 MHz/28 V New RF plastic packageDescription PowerSO-10RF(formed lead)The device is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It
pd57070.pdf
PD57070PD57070SRF POWER TRANSISTORSThe LdmoST Plastic FAMILYN-CHANNEL ENHANCEMENT-MODE LATERALMOSFETs EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 70 W with 14.7 dB gain @ 945 MHz / 28V NEW RF PLASTIC PACKAGEPowerSO-10RF(formed lead)ORDER CODE BRANDINGDESCRIPTIONPD57070 PD57070The PD57070 is a common source N-Channel,enhancement-mod
pd57045-e pd57045s-e.pdf
PD57045-EPD57045S-ERF POWER transistor, LdmoST plastic familyN-channel enhancement-mode, lateral MOSFETsFeatures Excellent thermal stability Common source configuration POUT = 45 W with 13dB gain @ 945 MHz / 28 V New RF plastic packageDescription PowerSO-10RF(formed lead)The device is a common source N-channel, enhancement-mode lateral field-effect RF power
pd57006-01.pdf
PD57006-01RF POWER TRANSISTORSThe LdmoST Plastic FAMILYTARGET DATAN-CHANNEL ENHANCEMENT-MODE LATERALMOSFETs EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 6 W with 15 dB gain @ 945 MHz / 28V NEW LEADLESS PLASTIC PACKAGEPowerFLAT(5x5)DESCRIPTIONORDER CODE BRANDINGThe PD57006-01 is a common source N-Channel,PD57006-01 PD57006-01enhance
pd57002-e pd57002s-e.pdf
PD57002-EPD57002S-ERF POWER transistor, LdmoST plastic familyN-channel enhancement-mode, lateral MOSFETsFeatures Excellent thermal stability Common source configuration POUT = 2 W with 15dB gain @ 960 MHz / 28 V New RF plastic packageDescription PowerSO-10RF(formed lead)The device is a common source N-channel, enhancement-mode lateral field-effect RF power
pd57002-01.pdf
PD57002-01RF POWER TRANSISTORSThe LdmoST Plastic FAMILYTARGET DATAN-CHANNEL ENHANCEMENT-MODE LATERALMOSFETs EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 2 W with 15 dB gain @ 960 MHz / 28 V NEW LEADLESS PLASTIC PACKAGEPowerFLAT(5x5)DESCRIPTIONORDER CODE BRANDINGThe PD57002-01 is a common source N-Channel,PD57002-01 PD57002-01enhan
pd57006-e pd57006s-e.pdf
PD57006-EPD57006S-ERF POWER transistor, LdmoST plastic familyN-channel enhancement-mode, lateral MOSFETsFeatures Excellent thermal stability Common source configuration POUT = 6 W with 15dB gain @ 945 MHz / 28 V New RF plastic packagePowerSO-10RF(formed lead)DescriptionThe device is a common source N-channel, enhancement-mode lateral field-effect RF power
pd57070-e pd57070s-e.pdf
PD57070-EPD57070S-ERF POWER transistor, LdmoST plastic familyN-channel enhancement-mode, lateral MOSFETsFeatures Excellent thermal stability Common source configuration POUT = 70 W with 14.7dB gain @945 MHz/28 V New RF plastic packageDescription PowerSO-10RF(formed lead)The device is a common source N-channel, enhancement-mode lateral field-effect RF power
pd57018-e.pdf
PD57018-ERF POWER transistor, LdmoST plastic familyN-channel enhancement-mode, lateral MOSFETsFeatures Excellent thermal stability Common source configuration POUT = 18 W with 16.5dB gain@945 MHz/28 V New RF plastic packagePowerSO-10RFDescription(formed lead)The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor.
pd57006.pdf
PD57006PD57006SRF POWER TRANSISTORSThe LdmoST Plastic FAMILYN-CHANNEL ENHANCEMENT-MODE LATERALMOSFETs EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 6 W with 15 dB gain @ 945 MHz / 28V NEW RF PLASTIC PACKAGEPowerSO-10RF(formed lead)DESCRIPTIONThe PD57006 is a common source N-Channel, en-ORDER CODE BRANDINGhancement-mode lateral Field-Ef
pd57018-e pd57018s-e.pdf
PD57018-EPD57018S-ERF POWER transistor, LdmoST plastic familyN-channel enhancement-mode, lateral MOSFETsFeatures Excellent thermal stability Common source configuration POUT = 18 W with 16.5dB gain@945 MHz/28 V New RF plastic packagePowerSO-10RFDescription(formed lead)The device is a common source N-channel, enhancement-mode lateral field-effect RF power
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: SI7439DP | RUH85120M-C | RU6080L
History: SI7439DP | RUH85120M-C | RU6080L
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