P0903BDB MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: P0903BDB
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 54 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 59 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 25 nS
Cossⓘ - Capacitancia de salida: 175 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
Encapsulados: TO252
Búsqueda de reemplazo de P0903BDB MOSFET
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P0903BDB datasheet
p0903bdb.pdf
P0903BDB N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 9m @VGS = 10V 30V 59A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 TC= 25 C 59 ID Continuous Drain Current TC= 100 C 37 A IDM 150 Pulsed Drain Current1
p0903bdl.pdf
P0903BDL N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25V 9.5m @VGS = 10V 56A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 25 V VGS Gate-Source Voltage 20 TC = 25 C 56 ID Continuous Drain Current TC = 100 C 35 A IDM 160 Pulsed Drain Current
p0903bda.pdf
P0903BDA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 9m @VGS = 10V 30V 56A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 TC= 25 C 56 ID Continuous Drain Current TC= 100 C 35 A IDM 160 Pulsed Drain Current1
p0903bd.pdf
P0903BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 9m @VGS = 10V 30V 57A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 TC= 25 C 57 ID Continuous Drain Current TC= 100 C 36 A IDM 160 Pulsed Drain Current1 I
Otros transistores... P0806ATX , P0808ATG , P082ABD8 , P0850AT , P0850ATF , P085AATX , P0903BD , P0903BDA , AO3400A , P0903BDG , P0903BDL , P0603BD , P0603BDB , P0603BDD , P0603BDF , P0603BDG , P0603BDL .
History: FCPF11N60 | SSF1331P
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