Справочник MOSFET. P0903BDB

 

P0903BDB MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: P0903BDB
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 54 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 59 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 25 ns
   Cossⓘ - Выходная емкость: 175 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.009 Ohm
   Тип корпуса: TO252

 Аналог (замена) для P0903BDB

 

 

P0903BDB Datasheet (PDF)

 ..1. Size:465K  unikc
 p0903bdb.pdf

P0903BDB P0903BDB

P0903BDBN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID9m @VGS = 10V30V 59ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 20TC= 25 C59IDContinuous Drain CurrentTC= 100 C37AIDM150Pulsed Drain Current1

 7.1. Size:455K  unikc
 p0903bdl.pdf

P0903BDB P0903BDB

P0903BDLN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID25V 9.5m @VGS = 10V 56ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 25VVGSGate-Source Voltage 20TC = 25 C56IDContinuous Drain CurrentTC = 100 C35AIDM160Pulsed Drain Current

 7.2. Size:493K  unikc
 p0903bda.pdf

P0903BDB P0903BDB

P0903BDAN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID9m @VGS = 10V30V 56ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 20TC= 25 C56IDContinuous Drain CurrentTC= 100 C35AIDM160Pulsed Drain Current1

 7.3. Size:521K  unikc
 p0903bd.pdf

P0903BDB P0903BDB

P0903BDN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID9m @VGS = 10V30V 57ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 20TC= 25 C57IDContinuous Drain CurrentTC= 100 C36AIDM160Pulsed Drain Current1I

 7.4. Size:532K  unikc
 p0903bdg.pdf

P0903BDB P0903BDB

P0903BDGN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID9.5m @VGS = 10V25V 56ATO-252ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 25VVGSGate-Source Voltage 20TC= 25 C56IDContinuous Drain CurrentTC= 100 C35AIDM160Pulsed Drain Current1

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top