P0603BDB Todos los transistores

 ..1. Size:479K  unikc
 p0603bdb.pdf

P0603BDB N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 5.8m @VGS = 10V 30V 72A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC= 25 C 72 ID Continuous Drain Current2 TC= 100 C 46 A IDM 160 Pulsed Drain Current1 IAS Avalanche Current 50 E

 7.1. Size:450K  unikc
 p0603bd.pdf

P0603BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 5.8m @VGS = 10V 70A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 TC = 25 C 70 ID Continuous Drain Current TC = 100 C 44 A IDM 180 Pulsed Drain Current1

 7.2. Size:662K  unikc
 p0603bdg.pdf

P0603BDG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 6.5m @VGS = 10V 30V 68A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 TC= 25 C 68 ID Continuous Drain Current TC= 100 C 43 A IDM 180 Pulsed Drain Current1

 7.3. Size:456K  unikc
 p0603bdl.pdf

P0603BDL N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25V 6.8m @VGS = 10V 68A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 25 V VGS Gate-Source Voltage 20 TC = 25 C 68 ID Continuous Drain Current1 TC = 100 C 43 A IDM 160 Pulsed Drain Curren

 7.4. Size:477K  unikc
 p0603bdf.pdf

P0603BDF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 5.8m @VGS = 10V 30V 78A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC= 25 C 78 ID Continuous Drain Current2 TC= 100 C 49 A IDM 140 Pulsed Drain Current1 IAS Avalanche Current 35 E

 7.5. Size:479K  unikc
 p0603bdd.pdf

P0603BDD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 5.8m @VGS = 10V 30V 71A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC= 25 C 71 ID Continuous Drain Current2 TC= 100 C 45 A IDM 180 Pulsed Drain Current1 IAS Avalanche Current 41 E