P0603BDB PDF and Equivalents Search

 

P0603BDB Specs and Replacement

Type Designator: P0603BDB

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 55 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 72 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 45 nS

Cossⓘ - Output Capacitance: 363 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0058 Ohm

Package: TO252

P0603BDB substitution

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P0603BDB datasheet

 ..1. Size:479K  unikc
 p0603bdb.pdf pdf_icon

P0603BDB

P0603BDB N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 5.8m @VGS = 10V 30V 72A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC= 25 C 72 ID Continuous Drain Current2 TC= 100 C 46 A IDM 160 Pulsed Drain Current1 IAS Avalanche Current 50 E... See More ⇒

 7.1. Size:450K  unikc
 p0603bd.pdf pdf_icon

P0603BDB

P0603BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 5.8m @VGS = 10V 70A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 TC = 25 C 70 ID Continuous Drain Current TC = 100 C 44 A IDM 180 Pulsed Drain Current1... See More ⇒

 7.2. Size:662K  unikc
 p0603bdg.pdf pdf_icon

P0603BDB

P0603BDG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 6.5m @VGS = 10V 30V 68A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 TC= 25 C 68 ID Continuous Drain Current TC= 100 C 43 A IDM 180 Pulsed Drain Current1... See More ⇒

 7.3. Size:456K  unikc
 p0603bdl.pdf pdf_icon

P0603BDB

P0603BDL N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25V 6.8m @VGS = 10V 68A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 25 V VGS Gate-Source Voltage 20 TC = 25 C 68 ID Continuous Drain Current1 TC = 100 C 43 A IDM 160 Pulsed Drain Curren... See More ⇒

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Detailed specifications: P0850ATF , P085AATX , P0903BD , P0903BDA , P0903BDB , P0903BDG , P0903BDL , P0603BD , 7N60 , P0603BDD , P0603BDF , P0603BDG , P0603BDL , P0603BEAD , P0603BK , P0603BT , P0603BV .

History: IPB60R099C7

Keywords - P0603BDB MOSFET specs

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