P0603BDD Todos los transistores

 

P0603BDD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: P0603BDD
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 71 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 39 nS
   Cossⓘ - Capacitancia de salida: 274 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0058 Ohm
   Paquete / Cubierta: TO252
     - Selección de transistores por parámetros

 

P0603BDD Datasheet (PDF)

 ..1. Size:479K  unikc
 p0603bdd.pdf pdf_icon

P0603BDD

P0603BDDN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID5.8m @VGS = 10V30V 71ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC= 25 C71IDContinuous Drain Current2TC= 100 C45AIDM180Pulsed Drain Current1IASAvalanche Current 41E

 7.1. Size:450K  unikc
 p0603bd.pdf pdf_icon

P0603BDD

P0603BDN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID30V 5.8m @VGS = 10V 70ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 20TC = 25 C70IDContinuous Drain CurrentTC = 100 C44AIDM180Pulsed Drain Current1

 7.2. Size:479K  unikc
 p0603bdb.pdf pdf_icon

P0603BDD

P0603BDBN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID5.8m @VGS = 10V30V 72ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC= 25 C72IDContinuous Drain Current2TC= 100 C46AIDM160Pulsed Drain Current1IASAvalanche Current 50E

 7.3. Size:662K  unikc
 p0603bdg.pdf pdf_icon

P0603BDD

P0603BDGN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID6.5m @VGS = 10V30V 68ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 20TC= 25 C68IDContinuous Drain CurrentTC= 100 C43AIDM180Pulsed Drain Current1

MOSTRAR MÁS

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: BL3N100-U | IRF7316QPBF | WSC5N20A | SI3585DV-T1 | CS1N60A1H | BLF7G24LS-100 | BSB017N03LX3

 

 
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