P9006ESG Datasheet. Equivalente

 ..1. Size:456K  unikc
 p9006esg.pdf

P9006ESG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 90m @VGS = 10V -60V -18A TO-263 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -60 V VGS Gate-Source Voltage 20 TC = 25 C -18 ID Continuous Drain Current TC = 100 C -12 A IDM -48 Pulsed Drain

 8.1. Size:250K  cystek
 mtp9006e3.pdf

Spec. No. C733E3 Issued Date 2010.07.09 CYStech Electronics Corp. Revised Date Page No. 1/6 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -60V MTP9006E3 ID -10A 95m Features RDSON(MAX) Low Gate Charge Simple Drive Requirement Pb-free lead plating package Equivalent Circuit Outline TO-220 MTP9006E3 G Gate D Drain S Source

 8.2. Size:361K  unikc
 p9006ei.pdf

P9006EI P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -60V 90m @VGS = -10V -18A TO-251 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC = 25 C -18 ID Continuous Drain Current1 TC = 100 C -11 A IDM -50 Pulsed Drain Current2 IAS Avalanche Current

 8.3. Size:365K  unikc
 p9006el.pdf

P9006EL P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -60V 90m @VGS = 10V -4A SOT- 223 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TA = 25 C -4 ID Continuous Drain Current1 TA = 100 C -2.7 A IDM -30 Pulsed Drain Current2 IAS Avalanche Current

 8.4. Size:463K  unikc
 p9006edg.pdf

P9006EDG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 90m @VGS = -10V -60V -15A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -60 V VGS Gate-Source Voltage 20 TC = 25 C -15 ID Continuous Drain Current TC = 100 C -10 A IDM -50 Pulsed Drain C

 8.5. Size:365K  unikc
 p9006etf.pdf

P9006ETF P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -60 90m @VGS = 10V -15A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -60 V VGS Gate-Source Voltage 20 TC = 25 C -15 ID Continuous Drain Current1 TC = 100 C -9.5 A IDM -60 Pulsed Drain

 8.6. Size:489K  unikc
 p9006evg.pdf

P9006EVG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -60V 90m @VGS = -10V -4.5A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) ( ) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -60 V VGS Gate-Source Voltage 20 TA = 25 C -4.5 ID Continuous Drain Current TA = 70 C A -3.5 IDM -20 Pulsed Drain

 8.7. Size:210K  niko-sem
 p9006eda.pdf

P-Channel Enhancement Mode P9006EDA NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY D V(BR)DSS RDS(ON) ID -60V 90m -13A G 1. GATE 2. DRAIN 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS 25 V TC =

 8.8. Size:416K  niko-sem
 p9006eva.pdf

P-Channel Logic Level Enhancement Mode P9006EVA NIKO-SEM Field Effect Transistor SOP-8 Halogen-free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID D 90m -3.6A -60V G GATE G D DRAIN S SOURCE 100% UIS Tested S 100% Rg Tested ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Volta

 8.9. Size:489K  niko-sem
 p9006evg.pdf

P9006EVG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -60V 90m @VGS = -10V -4.5A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) ( ) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -60 V VGS Gate-Source Voltage 20 TA = 25 C -4.5 ID Continuous Drain Current TA = 70 C A -3.5 IDM -20 Pulsed Drain

 8.10. Size:829K  cn vbsemi
 p9006edg.pdf

P9006EDG www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A) Qg (Typ) 100 % UIS Tested 0.061 at VGS = - 10 V - 30 APPLICATIONS - 60 10 0.072 at VGS = - 4.5 V - 26 Load Switch S TO-252 G G D S Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter Symb