P9006ESG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: P9006ESG
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 54 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 18 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 22 nC
   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 99 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.09 Ohm
   Paquete / Cubierta: TO263

Búsqueda de reemplazo de MOSFET P9006ESG

P9006ESG Datasheet (PDF)

..1. Size:456K unikc
p9006esg.pdf

P9006ESG P-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID90m @VGS = 10V -60V -18A TO-263ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -60VVGSGate-Source Voltage 20TC = 25 C-18IDContinuous Drain CurrentTC = 100 C-12AIDM-48Pulsed Drain

8.1. Size:250K cystek
mtp9006e3.pdf

Spec. No. : C733E3 Issued Date : 2010.07.09 CYStech Electronics Corp.Revised Date : Page No. : 1/6 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -60VMTP9006E3 ID -10A95m Features RDSON(MAX) Low Gate Charge Simple Drive Requirement Pb-free lead plating package Equivalent Circuit Outline TO-220 MTP9006E3 GGate DDrain SSource

8.2. Size:361K unikc
p9006ei.pdf

P9006EIP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID-60V 90m @VGS = -10V -18A TO-251ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC = 25 C-18IDContinuous Drain Current1TC = 100 C-11AIDM-50Pulsed Drain Current2IASAvalanche Current

8.3. Size:365K unikc
p9006el.pdf

P9006ELP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID-60V 90m @VGS = 10V -4A SOT- 223ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTA = 25 C-4IDContinuous Drain Current1TA = 100 C-2.7AIDM-30Pulsed Drain Current2IASAvalanche Current

8.4. Size:463K unikc
p9006edg.pdf

P9006EDGP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID90m @VGS = -10V-60V -15ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -60VVGSGate-Source Voltage 20TC = 25 C-15IDContinuous Drain CurrentTC = 100 C-10AIDM-50Pulsed Drain C

8.5. Size:365K unikc
p9006etf.pdf

P9006ETF P-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID-60 90m @VGS = 10V -15ATO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -60VVGSGate-Source Voltage 20TC = 25 C-15IDContinuous Drain Current1TC = 100 C-9.5AIDM-60Pulsed Drain

8.6. Size:489K unikc
p9006evg.pdf

P9006EVGP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID -60V 90m @VGS = -10V -4.5ASOP- 08ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)( )PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -60VVGSGate-Source Voltage 20TA = 25 C-4.5IDContinuous Drain CurrentTA = 70 C A-3.5IDM-20Pulsed Drain

8.7. Size:210K niko-sem
p9006eda.pdf

P-Channel Enhancement Mode P9006EDA NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY D V(BR)DSS RDS(ON) ID -60V 90m -13A G 1. GATE 2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS 25 V TC =

8.8. Size:416K niko-sem
p9006eva.pdf

P-Channel Logic Level Enhancement Mode P9006EVA NIKO-SEM Field Effect Transistor SOP-8 Halogen-free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID D90m -3.6A -60V G : GATE G D : DRAIN S : SOURCE 100% UIS Tested S100% Rg Tested ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Volta

8.9. Size:489K niko-sem
p9006evg.pdf

8.10. Size:829K cn vbsemi
p9006edg.pdf

P9006EDGwww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ) 100 % UIS Tested0.061 at VGS = - 10 V - 30APPLICATIONS- 60 100.072 at VGS = - 4.5 V - 26 Load SwitchSTO-252GG D STop ViewDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParameter Symb

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