P9006ESG MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: P9006ESG
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 54 W
Предельно допустимое напряжение сток-исток |Uds|: 60 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 3 V
Максимально допустимый постоянный ток стока |Id|: 18 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 22 nC
Время нарастания (tr): 15 ns
Выходная емкость (Cd): 99 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.09 Ohm
Тип корпуса: TO263
P9006ESG Datasheet (PDF)
p9006esg.pdf
P9006ESG P-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID90m @VGS = 10V -60V -18A TO-263ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -60VVGSGate-Source Voltage 20TC = 25 C-18IDContinuous Drain CurrentTC = 100 C-12AIDM-48Pulsed Drain
mtp9006e3.pdf
Spec. No. : C733E3 Issued Date : 2010.07.09 CYStech Electronics Corp.Revised Date : Page No. : 1/6 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -60VMTP9006E3 ID -10A95m Features RDSON(MAX) Low Gate Charge Simple Drive Requirement Pb-free lead plating package Equivalent Circuit Outline TO-220 MTP9006E3 GGate DDrain SSource
p9006ei.pdf
P9006EIP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID-60V 90m @VGS = -10V -18A TO-251ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC = 25 C-18IDContinuous Drain Current1TC = 100 C-11AIDM-50Pulsed Drain Current2IASAvalanche Current
p9006el.pdf
P9006ELP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID-60V 90m @VGS = 10V -4A SOT- 223ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTA = 25 C-4IDContinuous Drain Current1TA = 100 C-2.7AIDM-30Pulsed Drain Current2IASAvalanche Current
p9006edg.pdf
P9006EDGP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID90m @VGS = -10V-60V -15ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -60VVGSGate-Source Voltage 20TC = 25 C-15IDContinuous Drain CurrentTC = 100 C-10AIDM-50Pulsed Drain C
p9006etf.pdf
P9006ETF P-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID-60 90m @VGS = 10V -15ATO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -60VVGSGate-Source Voltage 20TC = 25 C-15IDContinuous Drain Current1TC = 100 C-9.5AIDM-60Pulsed Drain
p9006evg.pdf
P9006EVGP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID -60V 90m @VGS = -10V -4.5ASOP- 08ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)( )PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -60VVGSGate-Source Voltage 20TA = 25 C-4.5IDContinuous Drain CurrentTA = 70 C A-3.5IDM-20Pulsed Drain
p9006evg.pdf
P9006EVGP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID -60V 90m @VGS = -10V -4.5ASOP- 08ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)( )PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -60VVGSGate-Source Voltage 20TA = 25 C-4.5IDContinuous Drain CurrentTA = 70 C A-3.5IDM-20Pulsed Drain
p9006edg.pdf
P9006EDGwww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ) 100 % UIS Tested0.061 at VGS = - 10 V - 30APPLICATIONS- 60 100.072 at VGS = - 4.5 V - 26 Load SwitchSTO-252GG D STop ViewDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParameter Symb
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