P0908AD Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: P0908AD  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 96 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 69 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 45 nS

Cossⓘ - Capacitancia de salida: 355 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm

Encapsulados: TO252

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P0908AD datasheet

 ..1. Size:798K  unikc
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P0908AD

P0908AD N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 9m @VGS = 10V 80V 69A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC= 25 C 69 ID Continuous Drain Current3 TC= 100 C 44 A IDM 160 Pulsed Drain Current1,2 IAS Avalanche Cu

 ..2. Size:179K  niko-sem
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P0908AD

N-Channel Logic Level Enhancement P0908AD NIKO-SEM TO-252 Mode Field Effect Transistor Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1.GATE 9m 80V 69A G 2.DRAIN 3.SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage VGS 20 V TC = 25 C 69 Continuous Drain Current

 8.1. Size:810K  unikc
 p0908atf.pdf pdf_icon

P0908AD

P0908ATF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 9m @VGS = 10V 80V 43A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC = 25 C 43 ID Continuous Drain Current2 TC = 100 C 27 A IDM 160 Pulsed Drain Current1,2 IAS Avalanche Current 38

 8.2. Size:568K  unikc
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P0908AD

P0908AT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 9m @VGS = 10V 80V 64A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 80 V VGS Gate-Source Voltage 20 TC = 25 C 64 ID Continuous Drain Current TC = 100 C 41 A IDM 160 Pulsed Drain Current1

MOSTRAR MÁS

Otros transistores... P0903BIS, P0903BK, P0903BKA, P0903BKB, P0903BT, P0903BTG, P0903BV, P0903BVA, AO3401, P0908AT, P0908ATF, P0910AS, P0910ATF, P0910ATG, P0920AD, P0920AT, P0920ATF