P0908AD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: P0908AD
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 96 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 69 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 55 nC
   trⓘ - Tiempo de subida: 45 nS
   Cossⓘ - Capacitancia de salida: 355 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
   Paquete / Cubierta: TO252

Búsqueda de reemplazo de MOSFET P0908AD

P0908AD Datasheet (PDF)

..1. Size:798K unikc
p0908ad.pdf

P0908ADN-Channel Logic Level Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID9m @VGS = 10V80V 69ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC= 25 C69IDContinuous Drain Current3TC= 100 C44AIDM160Pulsed Drain Current1,2IASAvalanche Cu

..2. Size:179K niko-sem
p0908ad.pdf

N-Channel Logic Level Enhancement P0908ADNIKO-SEM TO-252Mode Field Effect Transistor Halogen-Free & Lead-FreeDPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1.GATE 9m 80V 69A G 2.DRAIN 3.SOURCESABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSGate-Source Voltage VGS 20 VTC = 25 C 69 Continuous Drain Current

8.1. Size:810K unikc
p0908atf.pdf

P0908ATFN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID9m @VGS = 10V80V 43ATO-220FABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC = 25 C43IDContinuous Drain Current2TC = 100 C27AIDM160Pulsed Drain Current1,2IASAvalanche Current 38

8.2. Size:568K unikc
p0908at.pdf

P0908ATN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID9m @VGS = 10V80V 64ATO-220ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 80VVGSGate-Source Voltage 20TC = 25 C64IDContinuous Drain CurrentTC = 100 C41AIDM160Pulsed Drain Current1

8.3. Size:172K niko-sem
p0908atf.pdf

N-Channel Enhancement Mode P0908ATFNIKO-SEM Field Effect Transistor TO-220FHalogen-Free & Lead-FreeDPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1.GATE 9m 80V 43A G 2.DRAIN 3.SOURCESABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSGate-Source Voltage VGS 20 VTC = 25 C 43 Continuous Drain Current2 ID T

8.4. Size:243K niko-sem
p0908ak.pdf

N-Channel Enhancement Mode P0908AKNIKO-SEM Field Effect Transistor PDFN 5x6PHalogen-Free & Lead-FreeDD D D DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G80V 9m 50A G. GATE D. DRAIN S. SOURCE #1 S S S GSABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSDrain-Source Voltage VDS 80 VGate-Source Voltage VGS

Otros transistores... P0903BIS , P0903BK , P0903BKA , P0903BKB , P0903BT , P0903BTG , P0903BV , P0903BVA , 2SK3568 , P0908AT , P0908ATF , P0910AS , P0910ATF , P0910ATG , P0920AD , P0920AT , P0920ATF .

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