P1006BK MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: P1006BK
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 41 W
Tensión drenaje-fuente (Vds): 60 V
Tensión compuerta-fuente (Vgs): 20 V
Corriente continua de drenaje (Id): 43 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tiempo de elevación (tr): 34 nS
Conductancia de drenaje-sustrato (Cd): 215 pF
Resistencia drenaje-fuente RDS(on): 0.01 Ohm
Empaquetado / Estuche: PDFN5X6P
Búsqueda de reemplazo de MOSFET P1006BK
P1006BK Datasheet (PDF)
1.1. p1006bk.pdf 
Size:429K _unikc
P1006BK N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 10mΩ @VGS = 10V 60V 43A PDFN 5X6P ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 V Tc = 25 ° C 43 ID Continuous Drain Current3 Tc = 100 ° C 27 IDM 120 Pulsed Drain Curren
4.1. p1006bis.pdf Size:707K _unikc
P1006BIS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 10mΩ @VGS = 10V 60V 66A TO-251(IS) ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 V TC= 25 ° C 66 ID Continuous Drain Current2 TC= 100 ° C 42 A IDM 150 Pulsed Drain Cur
4.2. p1006btf-s.pdf Size:825K _unikc
P1006BTF / P1006BTFS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 10mΩ @VGS = 10V 60V 47A TO-220F TO-220FS ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 TC= 25 ° C 47 ID Continuous Drain Current TC= 100 ° C 29 A IDM 150
4.3. p1006bd.pdf Size:731K _unikc
P1006BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 10mΩ @VGS = 10V 60V 66A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 V TC = 25 ° C 66 ID Continuous Drain Current2 TC = 100 ° C 42 A IDM 150 Pulsed Drain Curren
4.4. p1006bt.pdf Size:477K _unikc
P1006BT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 10mΩ @VGS = 10V 60V 61A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 TC= 25 ° C 61 ID Continuous Drain Current2 TC= 100 ° C 39 A IDM 150 Pulsed Drain Current1
Otros transistores... P1003BK , P1003EK , P1003EVG , P1004BD , P1004BS , P1004HV , P1006BD , P1006BIS , IRF5210 , P1006BT , P1006BTF , P1006BTFS , P1060AT , P1060ATF , P1060ATFS , P1060ETF , P1060ETFS .
