P1006BT Datasheet. Equivalente

 ..1. Size:477K  unikc
 p1006bt.pdf

P1006BT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 10m @VGS = 10V 60V 61A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage 20 TC= 25 C 61 ID Continuous Drain Current2 TC= 100 C 39 A IDM 150 Pulsed Drain Current1

 ..2. Size:391K  niko-sem
 p1006bt.pdf

P1006BT N-Channel Enhancement Mode NIKO-SEM TO-220 Field Effect Transistor Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 60V 10m 61A G 1 GATE 2 DRAIN 3 SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 V TC = 25

 0.1. Size:825K  unikc
 p1006btf-s.pdf

P1006BTF / P1006BTFS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 10m @VGS = 10V 60V 47A TO-220F TO-220FS ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage 20 TC= 25 C 47 ID Continuous Drain Current TC= 100 C 29 A IDM 150

 8.1. Size:707K  unikc
 p1006bis.pdf

P1006BIS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 10m @VGS = 10V 60V 66A TO-251(IS) ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage 20 V TC= 25 C 66 ID Continuous Drain Current2 TC= 100 C 42 A IDM 150 Pulsed Drain Cur

 8.2. Size:429K  unikc
 p1006bk.pdf

P1006BK N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 10m @VGS = 10V 60V 43A PDFN 5X6P ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage 20 V Tc = 25 C 43 ID Continuous Drain Current3 Tc = 100 C 27 IDM 120 Pulsed Drain Curren

 8.3. Size:731K  unikc
 p1006bd.pdf

P1006BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 10m @VGS = 10V 60V 66A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage 20 V TC = 25 C 66 ID Continuous Drain Current2 TC = 100 C 42 A IDM 150 Pulsed Drain Curren

 8.4. Size:227K  niko-sem
 p1006bk.pdf

N-Channel Enhancement Mode P1006BK NIKO-SEM Field Effect Transistor PDFN 5x6P Halogen-Free & Lead-Free D D D D D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID G G. GATE 60V 10m 43A D. DRAIN S. SOURCE #1 S S S G S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 60 V Gate-Source Volt

 8.5. Size:346K  niko-sem
 p1006bd.pdf

P1006BD N-Channel Enhancement Mode NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 60V 10m 66A G 1 GATE 2 DRAIN 3 SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 V TC = 25