P1006BT
MOSFET. Datasheet pdf. Equivalent
Type Designator: P1006BT
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 83
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3
V
|Id|ⓘ - Maximum Drain Current: 61
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 42.2
nC
trⓘ - Rise Time: 29
nS
Cossⓘ -
Output Capacitance: 224
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.01
Ohm
Package:
TO220
P1006BT
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
P1006BT
Datasheet (PDF)
..1. Size:477K unikc
p1006bt.pdf 
P1006BTN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID10m @VGS = 10V60V 61ATO-220ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 60VVGSGate-Source Voltage 20TC= 25 C61IDContinuous Drain Current2TC= 100 C39AIDM150Pulsed Drain Current1
..2. Size:391K niko-sem
p1006bt.pdf
P1006BT N-Channel Enhancement Mode NIKO-SEM TO-220 Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 60V 10m 61A G1: GATE 2: DRAIN 3: SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 V TC = 25
0.1. Size:825K unikc
p1006btf-s.pdf
P1006BTF / P1006BTFSN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID10m @VGS = 10V60V 47ATO-220F TO-220FSABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 60VVGSGate-Source Voltage 20TC= 25 C47IDContinuous Drain CurrentTC= 100 C29AIDM150
8.1. Size:707K unikc
p1006bis.pdf
P1006BISN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID10m @VGS = 10V60V 66ATO-251(IS)ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 60 VVGSGate-Source Voltage 20 VTC= 25 C66IDContinuous Drain Current2TC= 100 C42AIDM150Pulsed Drain Cur
8.2. Size:429K unikc
p1006bk.pdf
P1006BKN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID10m @VGS = 10V60V 43APDFN 5X6PABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 60 VVGSGate-Source Voltage 20 VTc = 25 C43IDContinuous Drain Current3Tc = 100 C27IDM120Pulsed Drain Curren
8.3. Size:731K unikc
p1006bd.pdf
P1006BDN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID10m @VGS = 10V60V 66ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 60 VVGSGate-Source Voltage 20 VTC = 25 C66IDContinuous Drain Current2TC = 100 C42AIDM150Pulsed Drain Curren
8.4. Size:227K niko-sem
p1006bk.pdf
N-Channel Enhancement Mode P1006BK NIKO-SEM Field Effect Transistor PDFN 5x6P Halogen-Free & Lead-Free DD D D DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID GG. GATE 60V 10m 43A D. DRAIN S. SOURCE #1 S S S GSABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 60 V Gate-Source Volt
8.5. Size:346K niko-sem
p1006bd.pdf
P1006BD N-Channel Enhancement Mode NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 60V 10m 66A G1: GATE 2: DRAIN 3: SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 V TC = 25
Datasheet: FQT7N10L
, FDP083N15A
, FQU10N20C
, FDP075N15A
, FQU11P06
, FQU12N20
, FDPF085N10A
, FQU13N06L
, IRFZ44
, FDB86102LZ
, FQU17P06
, FQU1N60C
, FDP085N10A
, FQU20N06L
, FQU2N100
, FQU2N60C
, FDMC8030
.
