P1060ETF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: P1060ETF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 39 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 34 nS
Cossⓘ - Capacitancia de salida: 162 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.77 Ohm
Paquete / Cubierta: TO220F
Búsqueda de reemplazo de P1060ETF MOSFET
P1060ETF Datasheet (PDF)
p1060etf-s.pdf
P1060ETF / P1060ETFSN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID0.77 @VGS = 10V600V 10ATO-220F TO-220FSABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 600VVGSGate-Source Voltage 30TC= 25 C10IDContinuous Drain Current2TC= 100 C6AIDM
p1060etfna.pdf
P1060ETFNA N-Channel Enhancement Mode NIKO-SEM TO-220FN Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE 2. DRAIN G600V 0.75 10A 3. SOURCE S100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 600 V Gate-Source Vol
p1060atf-s.pdf
P1060ATF(S)N-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID0.75 @VGS = 10V600V 10A100% UIS testedTO-220F(S)ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 600VVGSGate-Source Voltage 30TC= 25 C10IDContinuous Drain Current2TC= 100 C6.2AIDM
p1060at.pdf
P1060ATN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID600V 0.75 @VGS = 10V 10ATO-220ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 600VVGSGate-Source Voltage 30TC = 25 C10IDContinuous Drain Current2TC = 100 C6AIDM40Pulsed Drain Current
Otros transistores... P1006BIS , P1006BK , P1006BT , P1006BTF , P1006BTFS , P1060AT , P1060ATF , P1060ATFS , NCEP15T14 , P1060ETFS , P1065AT , P1065ATF , P106AAT , P1070ATF , P1070ATFS , P1103BEA , P1103BVG .
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