All MOSFET. P1060ETF Datasheet

 

P1060ETF Datasheet and Replacement


   Type Designator: P1060ETF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 39 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 34 nS
   Cossⓘ - Output Capacitance: 162 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.77 Ohm
   Package: TO220F
 

 P1060ETF substitution

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P1060ETF Datasheet (PDF)

 0.1. Size:885K  unikc
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P1060ETF

P1060ETF / P1060ETFSN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID0.77 @VGS = 10V600V 10ATO-220F TO-220FSABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 600VVGSGate-Source Voltage 30TC= 25 C10IDContinuous Drain Current2TC= 100 C6AIDM

 0.2. Size:235K  niko-sem
p1060etfna.pdf pdf_icon

P1060ETF

P1060ETFNA N-Channel Enhancement Mode NIKO-SEM TO-220FN Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE 2. DRAIN G600V 0.75 10A 3. SOURCE S100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 600 V Gate-Source Vol

 9.1. Size:523K  unikc
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P1060ETF

P1060ATF(S)N-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID0.75 @VGS = 10V600V 10A100% UIS testedTO-220F(S)ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 600VVGSGate-Source Voltage 30TC= 25 C10IDContinuous Drain Current2TC= 100 C6.2AIDM

 9.2. Size:462K  unikc
p1060at.pdf pdf_icon

P1060ETF

P1060ATN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID600V 0.75 @VGS = 10V 10ATO-220ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 600VVGSGate-Source Voltage 30TC = 25 C10IDContinuous Drain Current2TC = 100 C6AIDM40Pulsed Drain Current

Datasheet: P1006BIS , P1006BK , P1006BT , P1006BTF , P1006BTFS , P1060AT , P1060ATF , P1060ATFS , IRFB31N20D , P1060ETFS , P1065AT , P1065ATF , P106AAT , P1070ATF , P1070ATFS , P1103BEA , P1103BVG .

History: TPC65R360M | BUK953R2-40E | SLD80R850SJ | MMN8822 | ME60P06T-G | AP6N6R5LMT-L | UT5504

Keywords - P1060ETF MOSFET datasheet

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