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P1260ATF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: P1260ATF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 120 nS
   Cossⓘ - Capacitancia de salida: 281 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.65 Ohm
   Paquete / Cubierta: TO220F
     - Selección de transistores por parámetros

 

P1260ATF Datasheet (PDF)

 ..1. Size:470K  unikc
 p1260atf.pdf pdf_icon

P1260ATF

P1260ATFN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID600V 0.65 @VGS = 10V 12ATO-220FABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 600VVGSGate-Source Voltage 30TC = 25 C12IDContinuous Drain Current2TC = 100 C8.5AIDM48Pulsed Drain Cur

 7.1. Size:474K  unikc
 p1260at.pdf pdf_icon

P1260ATF

P1260ATN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID600V 0.65 @VGS = 10V 12ATO-220ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 600VVGSGate-Source Voltage 30TC = 25 C12IDContinuous Drain Current2TC = 100 C8.5AIDM48Pulsed Drain Curre

 9.1. Size:996K  kexin
 dmp1260.pdf pdf_icon

P1260ATF

SMD Type MOSFETP-Channel MOSFETDMP1260 (KMP1260)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features VDS (V) =-20V ID =-3.3 A1 2 RDS(ON) 75m (VGS =-4.5V)+0.1+0.050.95 -0.1 0.1-0.01 RDS(ON) 140m (VGS =-2.5V)+0.11.9 -0.11. GateDrain2. Source3. DrainGateSource Absolute Maximum Ratings Ta = 25Parameter Symbol R

 9.2. Size:409K  ncepower
 ncep1260f.pdf pdf_icon

P1260ATF

Pb Free Producthttp://www.ncepower.com NCEP1260FNCE N-Channel Super Trench Power MOSFET Description The NCEP1260F uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high

MOSTRAR MÁS

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: OSG70R360DF | IPP65R190E6 | FDA69N25 | CEU02N9 | 2SK1546 | IRHMK57260SE | 2SK3387

 

 
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