P1260ATF - Даташиты. Аналоги. Основные параметры

P1260ATF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 600V 0.65 @VGS = 10V 12A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage 30 TC = 25 C 12 ID Continuous Drain Current2 TC = 100 C 8.5 A IDM 48 Pulsed Drain Cur

P1260AT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 600V 0.65 @VGS = 10V 12A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage 30 TC = 25 C 12 ID Continuous Drain Current2 TC = 100 C 8.5 A IDM 48 Pulsed Drain Curre

SMD Type MOSFET P-Channel MOSFET DMP1260 (KMP1260) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features VDS (V) =-20V ID =-3.3 A 1 2 RDS(ON) 75m (VGS =-4.5V) +0.1 +0.05 0.95 -0.1 0.1-0.01 RDS(ON) 140m (VGS =-2.5V) +0.1 1.9 -0.1 1. Gate Drain 2. Source 3. Drain Gate Source Absolute Maximum Ratings Ta = 25 Parameter Symbol R

Pb Free Product http //www.ncepower.com NCEP1260F NCE N-Channel Super Trench Power MOSFET Description The NCEP1260F uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high