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P1403EV8 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: P1403EV8
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 38 nC
   trⓘ - Tiempo de subida: 16 nS
   Cossⓘ - Capacitancia de salida: 410 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm
   Paquete / Cubierta: SOP8

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P1403EV8 Datasheet (PDF)

 ..1. Size:473K  unikc
p1403ev8.pdf

P1403EV8
P1403EV8

P1403EV8P-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID14m @VGS = -10V -30V - 12ASOP- 08ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -30VVGSGate-Source Voltage 20TA = 25 C-12IDContinuous Drain Current2TA = 70 C-10AIDM-65Pulsed Drai

 8.1. Size:513K  unikc
p1403ek.pdf

P1403EV8
P1403EV8

P1403EKP-Channel Logic Level Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID14m @VGS = 10V-30V -30APDFN 5*6PABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -30VVGSGate-Source Voltage 25TC = 25 C(Package Limited)-30IDContinuous Drain Current TC = 25 C(Silic

 9.1. Size:395K  onsemi
pcp1403.pdf

P1403EV8
P1403EV8

Ordering number : ENA2294A PCP1403 N-Channel Power MOSFEThttp://onsemi.com 60V, 4.5A, 117m, Single PCP Features On-resistance RDS(on)1=92m(typ.) 4V drive Protection Diode in Halogen free compliance Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Conditions Value UnitDrain to Source Voltage VDSS 60 V Gate to Source Voltage

 9.2. Size:463K  unikc
p1403cv.pdf

P1403EV8
P1403EV8

P1403CVN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID14.6m @VGS = 10V30V 11ASOP- 08ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 12TA = 25 C11IDContinuous Drain Current1TA = 70 C7AIDM45Pulsed Drain Current

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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