P1403EV8 Todos los transistores

 

P1403EV8 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: P1403EV8
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 16 nS
   Cossⓘ - Capacitancia de salida: 410 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm
   Paquete / Cubierta: SOP8

 Búsqueda de reemplazo de MOSFET P1403EV8

 

P1403EV8 Datasheet (PDF)

 ..1. Size:473K  unikc
 p1403ev8.pdf pdf_icon

P1403EV8

P1403EV8 P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 14m @VGS = -10V -30V - 12A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage 20 TA = 25 C -12 ID Continuous Drain Current2 TA = 70 C -10 A IDM -65 Pulsed Drai

 8.1. Size:513K  unikc
 p1403ek.pdf pdf_icon

P1403EV8

P1403EK P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 14m @VGS = 10V -30V -30A PDFN 5*6P ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage 25 TC = 25 C(Package Limited) -30 ID Continuous Drain Current TC = 25 C(Silic

 9.1. Size:395K  onsemi
 pcp1403.pdf pdf_icon

P1403EV8

Ordering number ENA2294A PCP1403 N-Channel Power MOSFET http //onsemi.com 60V, 4.5A, 117m , Single PCP Features On-resistance RDS(on)1=92m (typ.) 4V drive Protection Diode in Halogen free compliance Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions Value Unit Drain to Source Voltage VDSS 60 V Gate to Source Voltage

 9.2. Size:463K  unikc
 p1403cv.pdf pdf_icon

P1403EV8

P1403CV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 14.6m @VGS = 10V 30V 11A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 12 TA = 25 C 11 ID Continuous Drain Current1 TA = 70 C 7 A IDM 45 Pulsed Drain Current

MOSTRAR MÁS

Otros transistores... P1308ATFG , P1308ATG , P1350AT , P1350ATF , P1350ATFS , P1402CDG , P1403CV , P1403EK , IRF840 , P1503BVG , P1503HK , P1503HV , P1504BDG , P1504BVG , P1504EDG , P1504EIS , P1504HV .

 

 
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