P1403EV8 - аналоги, параметры транзистора - Справочник транзисторов

P1403EV8 даташит

..1. Size:473K unikc
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P1403EV8 P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 14m @VGS = -10V -30V - 12A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage 20 TA = 25 C -12 ID Continuous Drain Current2 TA = 70 C -10 A IDM -65 Pulsed Drai

8.1. Size:513K unikc
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P1403EK P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 14m @VGS = 10V -30V -30A PDFN 5*6P ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage 25 TC = 25 C(Package Limited) -30 ID Continuous Drain Current TC = 25 C(Silic

9.1. Size:395K onsemi
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Ordering number ENA2294A PCP1403 N-Channel Power MOSFET http //onsemi.com 60V, 4.5A, 117m , Single PCP Features On-resistance RDS(on)1=92m (typ.) 4V drive Protection Diode in Halogen free compliance Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions Value Unit Drain to Source Voltage VDSS 60 V Gate to Source Voltage

9.2. Size:463K unikc
p1403cv.pdf pdf_icon

P1403CV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 14.6m @VGS = 10V 30V 11A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 12 TA = 25 C 11 ID Continuous Drain Current1 TA = 70 C 7 A IDM 45 Pulsed Drain Current

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