P1504EIS Todos los transistores

 

P1504EIS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: P1504EIS
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 34 W
   Voltaje máximo drenador - fuente |Vds|: 40 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 38 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 3 V
   Carga de la puerta (Qg): 55 nC
   Tiempo de subida (tr): 31 nS
   Conductancia de drenaje-sustrato (Cd): 273 pF
   Resistencia entre drenaje y fuente RDS(on): 0.015 Ohm
   Paquete / Cubierta: TO251S

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P1504EIS Datasheet (PDF)

 ..1. Size:468K  unikc
p1504eis.pdf

P1504EIS
P1504EIS

P1504EISP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID15m @VGS = -10V-40V -38A100% Rg tested100% UIS testedTO-251(S)ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -40VVGSGate-Source Voltage 20TC = 25 C-38IDContinuous Drain CurrentTC = 100

 8.1. Size:647K  unikc
p1504edg.pdf

P1504EIS
P1504EIS

P1504EDGP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID15m @VGS = -10V-45A-40V100% Rg tested100% UIS testedTO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -40 VVGSGate-Source Voltage 20 VTA= 25 C-45IDContinuous Drain CurrentTA= 70 C

 9.1. Size:534K  unikc
p1504hv.pdf

P1504EIS
P1504EIS

P1504HVDual N-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID23m @VGS = 10V40V 7A100% UIS testedSOP-8 100% Rg testedABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 40VVGSGate-Source Voltage 25TA = 25 C7IDContinuous Drain CurrentTA= 100 C4A

 9.2. Size:477K  unikc
p1504bvg.pdf

P1504EIS
P1504EIS

P1504BVGN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID15m @VGS = 10V40V 9ASOP-8ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTA = 25 C9IDContinuous Drain CurrentTA = 70 C7.5AIDM35Pulsed Drain Current1IASAvalanche Current 32EAS

 9.3. Size:764K  unikc
p1504bdg.pdf

P1504EIS
P1504EIS

P1504BDGN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID15m @VGS = 10V40V 40ATO-252ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 40VVGSGate-Source Voltage 20TC = 25 C40IDContinuous Drain CurrentTC = 100 C25AIDM85Pulsed Drain Current1

Otros transistores... P1403EK , P1403EV8 , P1503BVG , P1503HK , P1503HV , P1504BDG , P1504BVG , P1504EDG , IRF540N , P1504HV , P1510ATG , P1520ED , P1603BD , P1603BEB , P1603BEBA , P1603BEBB , P1603BV .

 

 
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