P1504EIS - аналоги, параметры транзистора - Справочник транзисторов

P1504EIS технические параметры

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p1504eis.pdf pdf_icon

P1504EIS P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 15m @VGS = -10V -40V -38A 100% Rg tested 100% UIS tested TO-251(S) ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -40 V VGS Gate-Source Voltage 20 TC = 25 C -38 ID Continuous Drain Current TC = 100

8.1. Size:647K unikc
p1504edg.pdf pdf_icon

P1504EDG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 15m @VGS = -10V -45A -40V 100% Rg tested 100% UIS tested TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -40 V VGS Gate-Source Voltage 20 V TA= 25 C -45 ID Continuous Drain Current TA= 70 C

9.1. Size:534K unikc
p1504hv.pdf pdf_icon

P1504HV Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 23m @VGS = 10V 40V 7A 100% UIS tested SOP-8 100% Rg tested ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage 25 TA = 25 C 7 ID Continuous Drain Current TA= 100 C 4 A

9.2. Size:477K unikc
p1504bvg.pdf pdf_icon

P1504BVG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 15m @VGS = 10V 40V 9A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TA = 25 C 9 ID Continuous Drain Current TA = 70 C 7.5 A IDM 35 Pulsed Drain Current1 IAS Avalanche Current 32 EAS