P1603BV Todos los transistores

 

P1603BV MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: P1603BV

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Máxima disipación de potencia (Pd): 2.6 W

Voltaje máximo drenador - fuente |Vds|: 30 V

Voltaje máximo fuente - puerta |Vgs|: 20 V

Corriente continua de drenaje |Id|: 10 A

Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V

Carga de la puerta (Qg): 12 nC

Tiempo de subida (tr): 29 nS

Conductancia de drenaje-sustrato (Cd): 179 pF

Resistencia entre drenaje y fuente RDS(on): 0.016 Ohm

Paquete / Cubierta: SOP8

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P1603BV Datasheet (PDF)

 ..1. Size:336K  unikc
p1603bv.pdf

P1603BV
P1603BV

P1603BVN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID30V 16m @VGS = 10V 10ASOP- 08ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTA = 25 C10IDContinuous Drain CurrentTA = 70 C8AIDM55Pulsed Drain Current1IASAvalanche Current 23EAS

 0.1. Size:473K  unikc
p1603bva.pdf

P1603BV
P1603BV

P1603BVAN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID16m @VGS = 10V30V 9.4ASOP-8ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 20TA = 25 C9.4IDContinuous Drain CurrentTA = 70 C7.5AIDM50Pulsed Drain Current

 8.1. Size:456K  unikc
p1603beba.pdf

P1603BV
P1603BV

P1603BEBAN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON)ID316m @VGS = 10V30V 24APDFN 2X2SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 20TC = 25 C24TC = 100 C15IDContinuous Drain Current3TA = 25 C8.8ATA=

 8.2. Size:221K  unikc
p1603beb.pdf

P1603BV
P1603BV

P1603BEBN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON)ID316m @VGS = 10V30V 21APDFN 2X2SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 20TC = 25 C21TC = 100 C17IDContinuous Drain Current3TA = 25 C8ATA= 70

 8.3. Size:534K  unikc
p1603bd.pdf

P1603BV
P1603BV

P1603BDN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID14m @VGS = 10V30V 40ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 20TC= 25 C40IDContinuous Drain CurrentTC= 100 C32AIDM150Pulsed Drain Current1

 8.4. Size:681K  unikc
p1603bebb.pdf

P1603BV
P1603BV

P1603BEBBN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON)ID316m @VGS = 10V30V 24APDFN 2X2SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 20TC = 25 C24TC = 100 C15IDContinuous Drain Current3TA = 25 C8.2ATA=

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