P3506DT Todos los transistores

 ..1. Size:525K  unikc
 p3506dt.pdf

P3506DT P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -60V 35m @VGS = 10V -40A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -60 V VGS Gate-Source Voltage 20 TC = 25 C -40 ID Continuous Drain Current TC = 100 C -25 A IDM -150 Pulsed Drain Cur

 0.1. Size:373K  unikc
 p3506dtf.pdf

P3506DTF P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -60V 35m @VGS = -10V -20A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -60 V VGS Gate-Source Voltage 25 TC = 25 C -20 ID Continuous Drain Current TC = 100 C -10 A IDM -100 Pulsed Drai

 8.1. Size:496K  unikc
 p3506dd.pdf

P3506DD P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 35m @VGS = -10V -60V -26A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -60 V VGS Gate-Source Voltage 20 TC = 25 C -26 ID Continuous Drain Current TC = 100 C -16 A IDM -100 Pulsed Drain C

 9.1. Size:290K  niko-sem
 p3506ed.pdf

P-Channel Enhancement Mode P3506ED NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY D V(BR)DSS RDS(ON) ID -60V 35m -27A G 1. GATE 2. DRAIN 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS 25 V TC = 2

 9.2. Size:200K  niko-sem
 p3506etf.pdf

P-Channel Enhancement Mode P3506ETF NIKO-SEM TO-220F Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY D V(BR)DSS RDS(ON) ID -60V 35m -20A 1. GATE G 2. DRAIN 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS 25 V TC

 9.3. Size:199K  niko-sem
 p3506et.pdf

P-Channel Enhancement Mode P3506ET NIKO-SEM TO-220 Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY D V(BR)DSS RDS(ON) ID -60V 35m -36A 1. GATE G 2. DRAIN 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS 25 V TC =

 9.4. Size:385K  niko-sem
 p3506ek.pdf

P-Channel Logic Level Enhancement Mode P3506EK NIKO-SEM Field Effect Transistor PDFN 5x6P Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID D -60V 35m -27A G Features Pb-Free, Halogen Free and RoHS compliant. S Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. D D D D Optimized Gate Charge to Minimize Switching