P3606HK Todos los transistores

 ..1. Size:480K  unikc
 p3606hk.pdf

P3606HK Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 38m @VGS = 10V 60V 15A PDFN 5*6P ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage 20 TC = 25 C 15 ID Continuous Drain Current3 TC = 100 C 10 IDM 40 Pulsed Drain Cur

 ..2. Size:782K  niko-sem
 p3606hk.pdf

P3606HK Dual N-Channel Enhancement Mode NIKO-SEM PDFN 5x6P Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY D1 D1 D2 D2 V(BR)DSS RDS(ON) ID 60V 38m 15A G. GATE D. DRAIN S. SOURCE #1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 60 V Gate-Source

 9.1. Size:481K  unikc
 p3606bd.pdf

P3606BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 36m @VGS = 10V 60V 22A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage 20 TC= 25 C 22 ID Continuous Drain Current TC= 100 C 14 A IDM 45 Pulsed Drain Current1 I

 9.2. Size:368K  niko-sem
 p3606bk.pdf

P3606BK NIKO-SEM N-Channel Enhancement Mode PDFN 5x6P Field Effect Transistor Halogen-Free & Lead-Free D D D D D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID G 60V 40m 17A G. GATE D. DRAIN S. SOURCE #1 S S S G S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 60 V Gate-Source Vol

 9.3. Size:553K  niko-sem
 p3606nea.pdf

N- & P-Channel Enhancement Mode Field P3606NEA NIKO-SEM Effect Transistor PDFN 3x3P Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID Q2 -60V 108m -9.7A Q1 60V 38m 16A D1 D1 D2 D2 G. GATE D. DRAIN S. SOURCE #1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Q2 Q1 UNITS Drain-Source Voltage

 9.4. Size:295K  niko-sem
 p3606bd.pdf

P3606BD N-Channel Enhancement Mode NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE G 60V 36m 22A 2. DRAIN 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 V TC = 25

 9.5. Size:303K  niko-sem
 p3606bea.pdf

P3606BEA NIKO-SEM N-Channel Enhancement Mode PDFN 3x3P Field Effect Transistor Halogen-Free & Lead-Free D D D D D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID G 60V 36m 16A G. GATE D. DRAIN #1 S S S G S. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 60 V Gate-Source Volt