P5002CDG Todos los transistores

 ..1. Size:522K  unikc
 p5002cdg.pdf

P5002CDG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 50m @VGS = 10V 20V 20A TO-252 ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 16 V TC= 25 C 20 ID Continuous Drain Current TC= 100 C 13 A IDM 60 Pulsed Drain Current1 IAS Avalanche Current 6.8 EAS

 8.1. Size:373K  unikc
 p5002cmg.pdf

P5002CMG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 50m @VGS = 4.5V 20V 4A SOT-23 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage 8 TA = 25 C 4 ID Continuous Drain Current TA = 70 A C 3.2 IDM 20 Pulsed Drain Current1

 9.1. Size:103K  motorola
 tp5002sr.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by TP5002S/D The RF Line UHF Linear Power Transistor TP5002S The TP5002S is an NPN gold metallized transistor using diffused ballast resistors for reliability and ruggedness. The TP5002S was specifically designed as a low power driver with high gain and can be operated in Class A, B or C. 380 512 MHz 1.5 W Pout

 9.2. Size:211K  hgsemi
 tp5002.pdf

HG RF POWER TRANSISTOR TP5002 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR Note Above parameters , ratings , limits and conditions are subject to change. Sep. 1998 www.HGSemi.com