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P5002CMG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: P5002CMG
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 72 nS
   Cossⓘ - Capacitancia de salida: 75 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm
   Paquete / Cubierta: SOT23
 

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P5002CMG Datasheet (PDF)

 ..1. Size:373K  unikc
 p5002cmg.pdf pdf_icon

P5002CMG

P5002CMGN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID50m @VGS = 4.5V20V 4ASOT-23 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 20VVGSGate-Source Voltage 8TA = 25 C4IDContinuous Drain CurrentTA = 70 AC3.2IDM20Pulsed Drain Current1

 8.1. Size:522K  unikc
 p5002cdg.pdf pdf_icon

P5002CMG

P5002CDGN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID50m @VGS = 10V20V 20ATO-252ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 16 VTC= 25 C20IDContinuous Drain CurrentTC= 100 C13AIDM60Pulsed Drain Current1IASAvalanche Current 6.8EAS

 9.1. Size:103K  motorola
 tp5002sr.pdf pdf_icon

P5002CMG

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby TP5002S/DThe RF LineUHF Linear Power TransistorTP5002SThe TP5002S is an NPN gold metallized transistor using diffused ballastresistors for reliability and ruggedness. The TP5002S was specifically designedas a low power driver with high gain and can be operated in Class A, B or C. 380512 MHz 1.5 W Pout

 9.2. Size:211K  hgsemi
 tp5002.pdf pdf_icon

P5002CMG

HG RF POWER TRANSISTORTP5002SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORNote : Above parameters , ratings , limits and conditions are subject to change.Sep. 1998www.HGSemi.com

MOSTRAR MÁS

Otros transistores... P3606BD , P3606HK , P4404EDG , P4404EI , P4404ETG , P4404QV , P4404QVT , P5002CDG , IRFZ24N , P5003QVG , P5003QVT , P5010AD , P5010AS , P5010AT , P2003BE , P2003BEA , P2003BEAA .

History: NCE65N330R | PMN230ENEA | AOB414

 

 
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