P5002CMG
MOSFET. Datasheet pdf. Equivalent
Type Designator: P5002CMG
Marking Code: 12*
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.3
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2
V
|Id|ⓘ - Maximum Drain Current: 4
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 4.7
nC
trⓘ - Rise Time: 72
nS
Cossⓘ -
Output Capacitance: 75
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05
Ohm
Package:
SOT23
P5002CMG
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
P5002CMG
Datasheet (PDF)
..1. Size:373K unikc
p5002cmg.pdf
P5002CMGN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID50m @VGS = 4.5V20V 4ASOT-23 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 20VVGSGate-Source Voltage 8TA = 25 C4IDContinuous Drain CurrentTA = 70 AC3.2IDM20Pulsed Drain Current1
8.1. Size:522K unikc
p5002cdg.pdf
P5002CDGN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID50m @VGS = 10V20V 20ATO-252ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 16 VTC= 25 C20IDContinuous Drain CurrentTC= 100 C13AIDM60Pulsed Drain Current1IASAvalanche Current 6.8EAS
9.1. Size:103K motorola
tp5002sr.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby TP5002S/DThe RF LineUHF Linear Power TransistorTP5002SThe TP5002S is an NPN gold metallized transistor using diffused ballastresistors for reliability and ruggedness. The TP5002S was specifically designedas a low power driver with high gain and can be operated in Class A, B or C. 380512 MHz 1.5 W Pout
9.2. Size:211K hgsemi
tp5002.pdf
HG RF POWER TRANSISTORTP5002SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORNote : Above parameters , ratings , limits and conditions are subject to change.Sep. 1998www.HGSemi.com
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