P5010AS MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: P5010AS

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 125 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 34 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 251 nS

Cossⓘ - Capacitancia de salida: 201 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm

Encapsulados: TO263

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P5010AS datasheet

 ..1. Size:336K  unikc
p5010as.pdf pdf_icon

P5010AS

P5010AS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 100V 50m @VGS = 10V 34A TO-263 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC = 25 C 34 ID Continuous Drain Current TC = 100 C 21 A IDM 120 Pulsed Drain Current1 IAS Avalanche Current 37

 8.1. Size:351K  unikc
p5010at.pdf pdf_icon

P5010AS

P5010AT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 100V 50m @VGS = 10V 30A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage 20 TC = 25 C 30 ID Continuous Drain Current TC = 100 C 18 A IDM 70 Pulsed Drain Current1

 8.2. Size:489K  unikc
p5010av.pdf pdf_icon

P5010AS

P5010AV N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 50m @VGS = 10V 100V 5A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V VGS Gate-Source Voltage 20 TA = 25 C 5 ID Continuous Drain Current1 TA = 100 C 3 A IDM 40 Pulsed Drain

 8.3. Size:575K  unikc
p5010ad.pdf pdf_icon

P5010AS

P5010AD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 50m @VGS = 10V 100V 23A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage 20 TC = 25 C 23 ID Continuous Drain Current1 TC = 100 C 14 A IDM 90 Pulsed Drain Curren

Otros transistores... P4404ETG, P4404QV, P4404QVT, P5002CDG, P5002CMG, P5003QVG, P5003QVT, P5010AD, IRFP250, P5010AT, P2003BE, P2003BEA, P2003BEAA, P2003BT, P2003BV, P2003BVG, P2003BVT