P5010AS Todos los transistores

 

P5010AS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: P5010AS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 34 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 251 nS
   Cossⓘ - Capacitancia de salida: 201 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm
   Paquete / Cubierta: TO263
 

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P5010AS Datasheet (PDF)

 ..1. Size:336K  unikc
p5010as.pdf pdf_icon

P5010AS

P5010AS N-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID100V 50m @VGS = 10V 34A TO-263ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC = 25 C34IDContinuous Drain CurrentTC = 100 C21AIDM120Pulsed Drain Current1IASAvalanche Current 37

 8.1. Size:351K  unikc
p5010at.pdf pdf_icon

P5010AS

P5010ATN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID100V 50m @VGS = 10V 30ATO-220ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 100VVGSGate-Source Voltage 20TC = 25 C30IDContinuous Drain CurrentTC = 100 C18AIDM70Pulsed Drain Current1

 8.2. Size:489K  unikc
p5010av.pdf pdf_icon

P5010AS

P5010AVN-Channel Logic Level Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID50m @VGS = 10V100V 5ASOP-8ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSDrain-Source Voltage VDS 100VVGSGate-Source Voltage 20TA = 25 C5IDContinuous Drain Current1TA = 100 C3AIDM40Pulsed Drain

 8.3. Size:575K  unikc
p5010ad.pdf pdf_icon

P5010AS

P5010ADN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID50m @VGS = 10V100V 23ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 100VVGSGate-Source Voltage 20TC = 25 C23IDContinuous Drain Current1TC = 100 C14AIDM90Pulsed Drain Curren

Otros transistores... P4404ETG , P4404QV , P4404QVT , P5002CDG , P5002CMG , P5003QVG , P5003QVT , P5010AD , STF13NM60N , P5010AT , P2003BE , P2003BEA , P2003BEAA , P2003BT , P2003BV , P2003BVG , P2003BVT .

History: DMG4466SSSL | FMV12N50E | FJ4B0124 | SI1413EDH | AO8810 | ELM36402EA | 7N60G-TF2-T

 

 
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